Low voltage fast-switching NPN power transistor

Description The device in a NPN transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. The complementary PNP is the 2STR2160. Features • Very low col

低压快速切换NPN功率晶体管

The device in a NPN transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.\n\n The complementary PNP is the 2STR2160. • Very low collector-emitter saturation voltage \n• High current gain characteristic \n• Fast switching speed \n• Miniature SOT-23 plastic package for surface mounting circuits;

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：管件 描述：TRANS NPN 60V 1A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个