N-CHANNEL SILICON POWER MOS-FET

Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Applications Switching regulators LPS DC-DC converters Genernal purpose power amplifier

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching p

N-CHANNEL SILICON POWER MOS-FET

High speed switching\nLow on-resistance\nNo secondary breakdown\nLow driving power\nHigh voltage\n\nApplications\nSwitching regulators\nLPS\nDC-DC converters\nGenernal purpose power amplifier;

Fast Switching Speed

文件：65.74 Kbytes Page：2 Pages