SWITCHING N-CHANNEL POWER MOSFET

The 2SK3659 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3659 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES •4.5V d