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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK3569 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI) Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.54 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) | TOSHIBA 东芝 |   | |
2SK3569 | isc N-Channel MOSFET Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 25V (Min) • Complement to Type 2SB1119 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for LF Amp Electronic Governor applications. | ISC 无锡固电 | | |
2SK3569 | Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | | |
2SK3569 | Silicon N Channel MOS Type Switching Regulator Applications 文件：236.53 Kbytes Page：6 Pages | TOSHIBA 东芝 | | |
2SK3569 | Switching Regulator Applications 文件：218.75 Kbytes Page：6 Pages | TOSHIBA 东芝 | | |
Silicon N Channel MOS Type Switching Regulator Applications 文件：236.53 Kbytes Page：6 Pages | TOSHIBA 东芝 | | ||
Switching Regulator Applications 文件：218.75 Kbytes Page：6 Pages | TOSHIBA 东芝 | |
2SK3569产品属性
- 类型
描述
- 型号
2SK3569
- 功能描述
MOSFET N-Ch 600V 10A Rdson 0.75 Ohm
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
24+ |
NA/ |
3266 |
原装现货,当天可交货,原型号开票 |
|||
TOSHIBA |
2016+ |
TP220F |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
TOSHIBA |
23+ |
TO-220 |
20000 |
全新原装假一赔十 |
|||
TOSHIBA/东芝 |
25+ |
TO-220F |
65428 |
百分百原装现货 实单必成 |
|||
RENESAS |
24+/25+ |
SOT-353 |
3000 |
100%原装正品真实库存,支持实单 |
|||
TOSHIBA/东芝 |
23+ |
SC-67 |
12700 |
买原装认准中赛美 |
|||
TOSHIBA/东芝 |
24+ |
TO-220 |
4000 |
实单必成支持实单 |
|||
TOSHIBA/东芝 |
24+ |
TO-220NIS |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
TOS东芝 |
25+ |
TO-220 |
6000 |
全新原装现货、诚信经营! |
|||
TOSHIBA(东芝) |
22+ |
N/A |
3206 |
原装正品物料 |
2SK3569规格书下载地址
2SK3569参数引脚图相关
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2SK3569数据表相关新闻
2SMPP-02
优势渠道
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2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-242SK508G-K51-AE3-R
属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
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2020-3-28
DdatasheetPDF页码索引
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