TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)

Switching Regulator Applications. 2SK3567 -> Marking K3567. • Low drain-source ON resistance: RDS (ON)= 1.7 Ω(typ.) • High forward transfer admittance: |Yfs| = 2.5 S (typ.) • Low leakage current: IDSS= 100 μA (max) (VDS= 600 V) • Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 m

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power MOSFET (N-ch 500V VDSS 700V)

Polarity：N-ch\nGeneration：π-MOSⅥ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 3.5 A \nPower Dissipation PD 35 W \nDrain-Source voltage VDSS 600 V ;

isc N-Channel MOSFET Transistor

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Silicon N Channel MOS Type Switching Regulator Applications

文件：223.23 Kbytes Page：6 Pages

Switching Regulator Applications

文件：205.14 Kbytes Page：6 Pages

Silicon N Channel MOS Type Switching Regulator Applications

文件：223.23 Kbytes Page：6 Pages

Switching Regulator Applications

文件：205.14 Kbytes Page：6 Pages