丝印代码：K3562；TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.9Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power MOSFET (N-ch 500V VDSS 700V)

Application Scope：Notebook PCs\nPolarity：N-ch\nGeneration：π-MOSⅥ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 / 马来西亚 Drain current ID 6 A \nPower Dissipation PD 40 W \nDrain-Source voltage VDSS 600 V ;

丝印代码：K3562；Switching Regulator Applications

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isc N-Channel MOSFET Transistor

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丝印代码：K3562；Silicon N Channel MOS Type Switching Regulator Applications

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Silicon N Channel MOS Type Switching Regulator Applications

文件：231.5 Kbytes Page：6 Pages

Switching Regulator Applications

文件：213.95 Kbytes Page：6 Pages