TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSVI)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power MOSFET (N-ch 250V VDSS 500V)

Polarity：N-ch\nGeneration：π-MOSⅥ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 马来西亚 Drain current ID 8 A \nPower Dissipation PD 40 W \nDrain-Source voltage VDSS 500 V ;

丝印代码：K3561；Switching Regulator Applications

文件：210.82 Kbytes Page：6 Pages

isc N-Channel MOSFET Transistor

文件：324.02 Kbytes Page：2 Pages

Silicon N Channel MOS Type Switching Regulator Applications

文件：229.15 Kbytes Page：6 Pages

Silicon N Channel MOS Type Switching Regulator Applications

文件：229.15 Kbytes Page：6 Pages

Switching Regulator Applications

文件：210.82 Kbytes Page：6 Pages