位置：首页 > IC中文资料第11999页 > 2SK3386-Z
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK3386-Z | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3386 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-state Resistance RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.0 V, ID = 17 A) • Low Ciss : Ciss = 2100 pF TYP. • Built | NEC 瑞萨 |   | |
2SK3386-Z | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3386 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-state Resistance RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.0 V, ID = 17 A) • Low Ci | RENESAS 瑞萨 | | |
2SK3386-Z | Nch Single Power Mosfet 60V 34A 21Mohm Mp-3Z/To-252 | RENESAS 瑞萨 | | |
2SK3386-Z | isc N-Channel MOSFET Transistor 文件：331.65 Kbytes Page：2 Pages | ISC 无锡固电 | | |
2SK3386-Z | N-Channel MOSFET uses advanced trench technology 文件：887.27 Kbytes Page：4 Pages | DOINGTER 杜因特 | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3386 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-state Resistance RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.0 V, ID = 17 A) • Low Ci | RENESAS 瑞萨 | | ||
MOS Field Effect Transistor Features ● Low on-resistance RDS(on)1 = 21 m MAX. (VGS = 10 V, ID = 17A) RDS(on)2 = 36 m MAX. (VGS = 4.0 V, ID = 17A) ● Low Ciss : Ciss = 2100 pF TYP. ● Built-in gate protection diode | KEXIN 科信电子 | | ||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3386 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-state Resistance RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.0 V, ID = 17 A) • Low Ciss : Ciss = 2100 pF TYP. • Built | NEC 瑞萨 | | ||
N-Channel 60 V (D-S) MOSFET 文件：960.09 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
isc N-Channel MOSFET Transistor 文件：399.19 Kbytes Page：2 Pages | ISC 无锡固电 | |
2SK3386-Z产品属性
- 类型
描述
- 型号
2SK3386-Z
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
25+ |
TO-252 |
33500 |
全新进口原装现货,假一罚十 |
|||
RENESAS |
2511 |
TO-252 |
3452 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
NEC |
24+ |
4326 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
24+ |
N/A |
60000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
RENESAS/瑞萨 |
20+ |
TO-252 |
32500 |
现货很近!原厂很远!只做原装 |
|||
RENESAS/瑞萨 |
2447 |
TO-252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
RENESAS/瑞萨 |
1925+ |
TO-252 |
12500 |
原装现货价格优势可供更多可出样 |
|||
RENESAS/瑞萨 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
|||
NEC |
25+23+ |
TO252 |
73337 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
NEC |
新年份 |
TO-252 |
20002 |
原装正品现货,实单带TP来谈! |
2SK3386-Z规格书下载地址
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2SK3386-Z数据表相关新闻
2SMPP-02
优势渠道
2023-2-162SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-242SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-242SK508G-K51-AE3-R
属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
2020-11-122SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-282SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28
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