型号 功能描述 生产厂家 企业 LOGO 操作

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3360 is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-state resistance RDS(on)1= 30 mΩMAX. (VGS= 10 V, ID= 18 A) RDS(on)2= 40 mΩMAX. (VGS= 4.5 V,

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3361 is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-state resistance RDS(on)1= 20 mΩMAX. (VGS= 10 V, ID= 20 A) RDS(on)2= 28 mΩMAX. (VGS= 4.5 V, ID=

NEC

瑞萨

POWER MOSFET

1. Scope This specifies Fuji Power MOSFET 2SK3362-01 2. Construction N-Channel enhancement mode power MOSFET 3. Applications for Switching 4. Outview TO-220 Outview See to 5/13 page

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High voltage ● Avalanche-proof Applications ● Switching regulators ● DC-DC converters ● General purpose power amplifier

Fuji

富士通

N-CHANNEL SILICON POWER MOS-FET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

N-CHANNEL SILICON POWER MOS-FET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3365 is N-Channel MOS Field Effect Transistor designed for DC/DC converters application of notebook computers. FEATURES • Low on-resistance RDS(on)1= 14 mΩ(MAX.) (VGS= 10 V, ID= 15 A) RDS(on)2= 21 mΩ(MAX.) (VGS= 4.5 V, ID= 15 A) RDS(on)3= 29 mΩ(MA

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3365 is N-Channel MOS Field Effect Transistor designed for DC/DC converters application of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 14 mΩ (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 mΩ (MAX.) (VGS = 4.5 V, ID = 1

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3365 is N-Channel MOS Field Effect Transistor designed for DC/DC converters application of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 14 mΩ (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 mΩ (MAX.) (VGS = 4.5 V, ID = 1

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3365 is N-Channel MOS Field Effect Transistor designed for DC/DC converters application of notebook computers. FEATURES • Low on-resistance RDS(on)1= 14 mΩ(MAX.) (VGS= 10 V, ID= 15 A) RDS(on)2= 21 mΩ(MAX.) (VGS= 4.5 V, ID= 15 A) RDS(on)3= 29 mΩ(MA

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3366 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers. FEATURES •Low on-resistance RDS(on)1= 21 mΩ(MAX.) (VGS= 10 V, ID= 10 A) RDS(on)2= 33 mΩ(MAX.) (VGS= 4.5 V, ID= 10

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3366 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 21 mΩ (MAX.) (VGS = 10 V, ID = 10 A) RDS(on)2 = 33 mΩ (MAX.) (VGS = 4.5 V, ID = 10

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3366 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 21 mΩ (MAX.) (VGS = 10 V, ID = 10 A) RDS(on)2 = 33 mΩ (MAX.) (VGS = 4.5 V, ID = 10

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3366 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers. FEATURES •Low on-resistance RDS(on)1= 21 mΩ(MAX.) (VGS= 10 V, ID= 10 A) RDS(on)2= 33 mΩ(MAX.) (VGS= 4.5 V, ID= 10

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3367 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers. FEATURES • Low on-resistance RDS(on)1= 9.0 mΩMAX. (VGS= 10 V, ID= 18 A) RDS(on)2= 12.0 mΩMAX. (VGS

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3367 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 12.0 mΩ MAX. (VGS = 4.5 V, ID = 18 A

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3367 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 12.0 mΩ MAX. (VGS = 4.5 V, ID = 18 A

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3367 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers. FEATURES • Low on-resistance RDS(on)1= 9.0 mΩMAX. (VGS= 10 V, ID= 18 A) RDS(on)2= 12.0 mΩMAX. (VGS

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

RENESAS

瑞萨

N-CHANNEL SILICON POWER MOS-FET

Fuji

富士通

isc N-Channel MOSFET Transistor

文件:332.88 Kbytes Page:2 Pages

ISC

无锡固电

N-CHANNEL SILICON POWER MOS-FET

Fuji

富士通

isc N-Channel MOSFET Transistor

文件:333.12 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:333.14 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:399.12 Kbytes Page:2 Pages

ISC

无锡固电

MOS Field Effect Transistor

文件:48.06 Kbytes Page:1 Pages

KEXIN

科信电子

N-Channel 30-V (D-S) MOSFET

文件:959.92 Kbytes Page:8 Pages

VBSEMI

微碧半导体

SWITCHING N-CHANNEL POWER MOS FET

文件:234 Kbytes Page:9 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件:331.58 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:398.45 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel 30-V (D-S) MOSFET

文件:959.93 Kbytes Page:8 Pages

VBSEMI

微碧半导体

MOS Field Effect Transistor

文件:47.48 Kbytes Page:1 Pages

KEXIN

科信电子

SWITCHING N-CHANNEL POWER MOS FET

文件:230.47 Kbytes Page:9 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件:330.9 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:399.29 Kbytes Page:2 Pages

ISC

无锡固电

MOS Field Effect Transistor

文件:47.5 Kbytes Page:1 Pages

KEXIN

科信电子

N-Channel 30-V (D-S) MOSFET

文件:959.92 Kbytes Page:8 Pages

VBSEMI

微碧半导体

SWITCHING P-CHANNEL POWER MOS FET

文件:237.98 Kbytes Page:9 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件:331.74 Kbytes Page:2 Pages

ISC

无锡固电

2SK336产品属性

  • 类型

    描述

  • 型号

    2SK336

  • 功能描述

    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 400MA I(D) | TO-92

更新时间:2025-11-20 17:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
25+
TO-220F220
45000
NEC全新现货2SK3360即刻询购立享优惠#长期有排单订
NEC
23+
TO-220F
90000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
FUJI
原厂封装
1000
一级代理 原装正品假一罚十价格优势长期供货
NEC
NEW
TO-220F
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
24+
60000
FUJITSU/富士通
20+
TO-220
32500
现货很近!原厂很远!只做原装
FUJI
25+
TO-TO-220
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
NEC
22+
TO-220
6000
十年配单,只做原装
NEC
24+
TO-220
6430
原装现货/欢迎来电咨询
FUJI/富士电机
24+
TO-220
60000

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