型号 功能描述 生产厂家&企业 LOGO 操作
2SK3355-ZJ

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3355 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.8 mΩ MAX. (VGS = 4.0 V, ID = 42 A) • Low Ciss: Ciss = 9800 pF TYP. •

NEC

瑞萨

2SK3355-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3355 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 5.8mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.8mΩ MAX. (VGS = 4.0 V, ID = 42 A) •

RENESAS

瑞萨

2SK3355-ZJ

isc N-Channel MOSFET Transistor

文件:401.64 Kbytes Page:2 Pages

ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3355 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 5.8mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.8mΩ MAX. (VGS = 4.0 V, ID = 42 A) •

RENESAS

瑞萨

MOS Field Effect Transistor

Features ● Super low on-state resistance: RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.8 mΩ MAX. (VGS = 4 V, ID = 42 A) ● Low Ciss: Ciss = 9800 pF TYP. ● Built-in gate protection diode

KEXIN

科信电子

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3355 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.8 mΩ MAX. (VGS = 4.0 V, ID = 42 A) • Low Ciss: Ciss = 9800 pF TYP. •

NEC

瑞萨

isc N-Channel MOSFET Transistor

文件:333.32 Kbytes Page:2 Pages

ISC

无锡固电

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3355 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.8 mΩ MAX. (VGS = 4.0 V, ID = 42 A) • Low Ciss: Ciss = 9800 pF TYP. •

NEC

瑞萨

更新时间:2025-8-17 14:07:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
04+
TO-3P
251
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS/瑞萨
2022+
TO-3P
50000
原厂代理 终端免费提供样品
NEC
24+
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
NEC
21+
TO-3P
251
原装现货假一赔十
NEC
23+
TO-3P
35890
NEC
24+
TO-3P
6430
原装现货/欢迎来电咨询
NEC
23+
TO-3P
50000
全新原装正品现货,支持订货
NEC
23+
TO-263
9800
原厂授权代理,海外优势订货渠道。可提供大量库存,详
NEC
1922+
TO3P
8650
绝对进口原装现货
NEC
23+
to220
50000
全新原装正品现货,支持订货

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