位置：首页 > IC中文资料第449页 > 2SK2796
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK2796 | Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12Ω typ. • 4V gate drive devices. • High speed switching | HitachiHitachi Semiconductor 日立日立公司 |   | |
2SK2796 | Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12 Ω typ. • 4 V gate drive devices. • High speed switching | RENESAS 瑞萨 | | |
2SK2796 | Silicon N Channel MOS FET High Speed Power Switching | HitachiHitachi Semiconductor 日立日立公司 | | |
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12 Ω typ. • 4 V gate drive devices. • High speed switching | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12Ω typ. • 4V gate drive devices. • High speed switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12 Ω typ. • 4 V gate drive devices. • High speed switching | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12 Ω typ. • 4 V gate drive devices. • High speed switching | RENESAS 瑞萨 | | ||
Silicon N-Channel MOSFET Features • Low on-resistance • RDS = 0.12 typ. • High speed switching | KEXIN 科信电子 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12Ω typ. • 4V gate drive devices. • High speed switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12 Ω typ. • 4 V gate drive devices. • High speed switching | RENESAS 瑞萨 | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.00198 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.33376 Mbytes Page：4 Pages | DOINGTER 杜因特 | | ||
isc N-Channel MOSFET Transistor 文件：371.21 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel MOSFET uses advanced trench technology 文件：674.87 Kbytes Page：5 Pages | DOINGTER 杜因特 | | ||
isc N-Channel MOSFET Transistor 文件：310.36 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.00201 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | |
2SK2796产品属性
- 类型
描述
- 型号
2SK2796
- 制造商
Renesas Electronics
- 功能描述
60V 5A DPAK-3
- 制造商
Renesas Electronics
- 功能描述
60V 5A DPAK-3 Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
25+ |
TO-251 |
30000 |
代理全新原装现货,价格优势 |
|||
Renesas(瑞萨) |
23+ |
原厂封装 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
|||
RENESAS/瑞萨 |
24+ |
TO252 |
17500 |
郑重承诺只做原装进口现货 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS/瑞萨 |
25+ |
NA |
860000 |
明嘉莱只做原装正品现货 |
|||
RENESAS |
18+ |
TO-252 |
85600 |
保证进口原装可开17%增值税发票 |
|||
RENESAS/瑞萨 |
22+ |
TO251 |
8000 |
原装正品支持实单 |
|||
HITACHI |
2023+ |
TO-252 |
50000 |
原装现货 |
|||
RENESAS/瑞萨 |
2447 |
TO252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
RENESAS/瑞萨 |
23+ |
TO252 |
66600 |
专业芯片配单原装正品假一罚十 |
2SK2796规格书下载地址
2SK2796参数引脚图相关
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2SK2796数据表相关新闻
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2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
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2021-6-242SK2415-Z-E1-AZ找代理商上深圳百域芯科技
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技 芯片详细信息 Manufacturer Part Number: 2SK3065 Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: ROHM CO LTD Package Description: ， Reach Compliance Code: compliant ECCN Code: EAR99 Manufacturer:
2021-6-242SK2415-Z-E1-AZ找代理商上深圳百域芯科技
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK2415-Z-E1-AZ Manufacturer Part Number: 2SK2415-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP Package Descriptio
2021-6-242SK2698
2SK2698，全新原装当天发货或门市自取0755-82732291.
2019-11-14
DdatasheetPDF页码索引
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