SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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MOS Field Effect Transistors

Features ● Low On-state Resistance:RDS(on)=4 max.(VGS=10V,ID=2.0A) ● Low Ciss Ciss=900pF TYP ● High Avalanche Capability Ratings

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2481 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-Resistance RDS(on) = 4.0 W (VGS = 10 V, ID = 2.0 A) • Low Ciss Ciss = 900 pF TYP. • High Avalanche Capab

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 4A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

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