MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SJ602 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Super low on-state resistance: RDS(on)1 = 73 mΩ MAX. (VGS = −10 V, ID = −10 A) RDS(on)2 = 107 mΩ MAX. (VGS = −4.0 V, ID = −10 A) • Low input capacitance: Ciss =

P-Channel MOSFET

■ Features ● VDS (V) =-60V ● ID =-20A ● RDS(ON)

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ602 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Super low on-state resistance: RDS(on)1 = 73 mΩ MAX. (VGS = −10 V, ID = −10 A) RDS(on)2 = 107 mΩ MAX. (VGS = −4.0 V, ID = −10 A) •

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SJ602 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Super low on-state resistance: RDS(on)1 = 73 mΩ MAX. (VGS = −10 V, ID = −10 A) RDS(on)2 = 107 mΩ MAX. (VGS = −4.0 V, ID = −10 A) • Low input capacitance: Ciss =

MOS Field Effect Transistor

Features Low on-resistance RDS(on)1 = 73 mΩ MAX. (VGS =-10 V, ID = -10 A) RDS(on)2 = 107mΩ MAX. (VGS = -4.0 V, ID =-10 A) Low Ciss: Ciss = 1300 pF TYP. Built-in gate protection diode

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ602 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Super low on-state resistance: RDS(on)1 = 73 mΩ MAX. (VGS = −10 V, ID = −10 A) RDS(on)2 = 107 mΩ MAX. (VGS = −4.0 V, ID = −10 A) •

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ602 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Super low on-state resistance: RDS(on)1 = 73 mΩ MAX. (VGS = −10 V, ID = −10 A) RDS(on)2 = 107 mΩ MAX. (VGS = −4.0 V, ID = −10 A) •

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SJ602 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Super low on-state resistance: RDS(on)1 = 73 mΩ MAX. (VGS = −10 V, ID = −10 A) RDS(on)2 = 107 mΩ MAX. (VGS = −4.0 V, ID = −10 A) • Low input capacitance: Ciss =