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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ602-ZJ | MOSFIELDEFFECTTRANSISTOR DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=73mΩMAX.(VGS=−10V,ID=−10A) RDS(on)2=107mΩMAX.(VGS=−4.0V,ID=−10A) •Lowinputcapacitance: Ciss= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
2SJ602-ZJ | P-ChannelMOSFET ■Features ●VDS(V)=-60V ●ID=-20A ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | |
2SJ602-ZJ | MOSFIELDEFFECTTRANSISTOR SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=73mΩMAX.(VGS=−10V,ID=−10A) RDS(on)2=107mΩMAX.(VGS=−4.0V,ID=−10A) • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
MOSFIELDEFFECTTRANSISTOR DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=73mΩMAX.(VGS=−10V,ID=−10A) RDS(on)2=107mΩMAX.(VGS=−4.0V,ID=−10A) •Lowinputcapacitance: Ciss= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFieldEffectTransistor Features Lowon-resistance RDS(on)1=73mΩMAX.(VGS=-10V,ID=-10A) RDS(on)2=107mΩMAX.(VGS=-4.0V,ID=-10A) LowCiss:Ciss=1300pFTYP. Built-ingateprotectiondiode | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=73mΩMAX.(VGS=−10V,ID=−10A) RDS(on)2=107mΩMAX.(VGS=−4.0V,ID=−10A) • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=73mΩMAX.(VGS=−10V,ID=−10A) RDS(on)2=107mΩMAX.(VGS=−4.0V,ID=−10A) • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=73mΩMAX.(VGS=−10V,ID=−10A) RDS(on)2=107mΩMAX.(VGS=−4.0V,ID=−10A) •Lowinputcapacitance: Ciss= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
2SJ602-ZJ产品属性
- 类型
描述
- 型号
2SJ602-ZJ
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
MOS FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
TO220 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
NEC |
1822+ |
TO-263 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
NEC |
20+/21+ |
TO-263 |
8530 |
全新原装进口价格优势 |
|||
NEC |
23+ |
TO-263 |
90000 |
一级代理商进口原装现货、价格合理 |
|||
NEC |
23+ |
TO-220 |
35890 |
||||
NEC |
23+ |
TO-263 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
NEC |
2339+ |
4326 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
NEC |
08+(pbfree) |
TO-263 |
8866 |
||||
NEC |
23+ |
TO-263 |
11754 |
全新原装 |
|||
RENESAS |
2020+ |
TO-220 |
32630 |
公司代理品牌,原装现货超低价清仓! |
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2SJ602-ZJ规格书下载地址
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2019-10-30
DdatasheetPDF页码索引
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