位置：首页 > IC中文资料第6907页 > 2SJ602-Z
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ602-Z | MOSFIELDEFFECTTRANSISTOR DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=73mΩMAX.(VGS=−10V,ID=−10A) RDS(on)2=107mΩMAX.(VGS=−4.0V,ID=−10A) •Lowinputcapacitance: Ciss= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
2SJ602-Z | MOSFIELDEFFECTTRANSISTOR SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=73mΩMAX.(VGS=−10V,ID=−10A) RDS(on)2=107mΩMAX.(VGS=−4.0V,ID=−10A) • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
MOSFieldEffectTransistor Features Lowon-resistance RDS(on)1=73mΩMAX.(VGS=-10V,ID=-10A) RDS(on)2=107mΩMAX.(VGS=-4.0V,ID=-10A) LowCiss:Ciss=1300pFTYP. Built-ingateprotectiondiode | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | | |
MOSFIELDEFFECTTRANSISTOR DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=73mΩMAX.(VGS=−10V,ID=−10A) RDS(on)2=107mΩMAX.(VGS=−4.0V,ID=−10A) •Lowinputcapacitance: Ciss= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=73mΩMAX.(VGS=−10V,ID=−10A) RDS(on)2=107mΩMAX.(VGS=−4.0V,ID=−10A) • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=73mΩMAX.(VGS=−10V,ID=−10A) RDS(on)2=107mΩMAX.(VGS=−4.0V,ID=−10A) •Lowinputcapacitance: Ciss= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
P-ChannelMOSFET ■Features ●VDS(V)=-60V ●ID=-20A ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=73mΩMAX.(VGS=−10V,ID=−10A) RDS(on)2=107mΩMAX.(VGS=−4.0V,ID=−10A) • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=73mΩMAX.(VGS=−10V,ID=−10A) RDS(on)2=107mΩMAX.(VGS=−4.0V,ID=−10A) • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR DESCRIPTION The2SJ602isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=73mΩMAX.(VGS=−10V,ID=−10A) RDS(on)2=107mΩMAX.(VGS=−4.0V,ID=−10A) •Lowinputcapacitance: Ciss= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
2SJ602-Z产品属性
- 类型
描述
- 型号
2SJ602-Z
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
MOS FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
13+ |
SOT263 |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
1822+ |
TO-263 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
RENESAS(瑞萨)/IDT |
23+ |
6000 |
|||||
RENESAS/瑞萨 |
24+ |
TO263 |
880000 |
明嘉莱只做原装正品现货 |
|||
RENESAS/Renesas Electronics Am |
21+ |
SOT263 |
3000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESAS |
21+ |
SOT263 |
3000 |
原装现货假一赔十 |
|||
NEC |
23+ |
TO-263 |
35890 |
||||
RENESAS |
2023+ |
SOT263 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
VBSEMI |
19+ |
TO-220 |
29600 |
绝对原装现货,价格优势! |
|||
RENESAS |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
2SJ602-Z芯片相关品牌
2SJ602-Z规格书下载地址
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2SJ602-Z数据表相关新闻
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2019-10-30
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