位置：首页 > IC中文资料第1010页 > 2SJ553-L(E)
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HitachiHitachi Semiconductor 日立日立公司 |   | ||
Silicon P Channel MOS FET • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：115.51 Kbytes Page：11 Pages | RENESAS 瑞萨 | |
2SJ553-L(E)产品属性
- 类型
描述
- 型号
2SJ553-L(E)
- 制造商
Renesas
- 功能描述
Trans MOSFET P-CH 60V 30A 3-Pin(3+Tab) LDPAK(L) Box
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
HIT |
23+ |
TO-262 |
5000 |
原装正品,假一罚十 |
|||
RENESAS |
2024 |
SOT263 |
8230 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
|||
RENESAS/瑞萨 |
24+ |
TO-263 |
16900 |
原装正品现货支持实单 |
|||
HITACHI |
1922+ |
SOT-262 |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
|||
RENESAS瑞萨/HITACHI日立 |
24+ |
TO-262 |
6205 |
新进库存/原装 |
|||
原装 |
25+ |
TO-252 |
20300 |
原装特价2SJ553L即刻询购立享优惠#长期有货 |
|||
RENESAS |
18+ |
SOT263 |
2961 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
2000 |
SIP-2.5 |
8 |
原装现货海量库存欢迎咨询 |
2SJ553-L(E)芯片相关品牌
2SJ553-L(E)规格书下载地址
2SJ553-L(E)参数引脚图相关
- 500t
- 5000
- 4921
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- 4735
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- 2SJ553S
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- 2SJ553(S)
- 2SJ553(L)|2SJ553(S)
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- 2SJ553
- 2SJ552STL-E
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- 2SJ552(L)|2SJ552(S)
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- 2SJ551-L(E)
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- 2SJ551(L)|2SJ551(S)
- 2SJ551
- 2SJ550S
- 2SJ550L
- 2SJ550
- 2SJ549S
- 2SJ549L
- 2SJ549
- 2SJ548
- 2SJ547
- 2SJ546
- 2SJ545
- 2SJ544
- 2SJ543
2SJ553-L(E)数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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