型号 功能描述 生产厂家 企业 LOGO 操作

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

更新时间:2026-1-5 16:50:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Sanyo
25+23+
Sot-23
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NA
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只做原装正品现货 欢迎来电查询15919825718
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25+
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全新原装现货,假一赔十
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20+
TO-220
32500
现货很近!原厂很远!只做原装
RENESAS/瑞萨
24+
NA/
24250
原装现货,当天可交货,原型号开票
RENESAS/瑞萨
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原厂代理 终端免费提供样品
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24+
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