型号 功能描述 生产厂家 企业 LOGO 操作
2SJ530STL-E

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

2SJ530STL-E

P-Channel 60-V (D-S) MOSFET

文件:988.35 Kbytes Page:8 Pages

VBSEMI

微碧半导体

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.08Ω typ. • 4V gate drive devices. • High speed switching.

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.08Ω typ. • 4V gate drive devices. • High speed switching.

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET

文件:114.53 Kbytes Page:11 Pages

RENESAS

瑞萨

2SJ530STL-E产品属性

  • 类型

    描述

  • 型号

    2SJ530STL-E

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    Trans MOSFET P-CH 60V 15A 3-Pin(2+Tab) DPAK(S) T/R Cut Tape

更新时间:2025-11-20 18:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
25+
TO-252
20300
RENESAS/瑞萨原装特价2SJ530STL-E即刻询购立享优惠#长期有货
RENESAS/瑞萨
21+
TO252
1709
RENESAS
2450+
TO252
9850
只做原装正品现货或订货假一赔十!
RENESAS/瑞萨
22+
TO-252
12500
原装正品支持实单
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
RENESAS/瑞萨
23+
TO252
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
RENESAS/瑞萨
新年份
TO-252
33288
原装正品现货,实单带TP来谈!
RENESAS/瑞萨
25+
TO252
860000
明嘉莱只做原装正品现货
RENESAS
25+23+
TO252
8124
绝对原装正品全新进口深圳现货
RENESAS/瑞萨
22+
TO252-2
8000
原装正品支持实单

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