型号 功能描述 生产厂家 企业 LOGO 操作
2SJ530L-E

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.08Ω typ. • 4V gate drive devices. • High speed switching.

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.08Ω typ. • 4V gate drive devices. • High speed switching.

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET

文件:114.53 Kbytes Page:11 Pages

RENESAS

瑞萨

2SJ530L-E产品属性

  • 类型

    描述

  • 型号

    2SJ530L-E

  • 制造商

    Renesas Electronics

  • 功能描述

    Tray

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    Pch MOSFET,60V,15A,80m ohm,DPAK-L

  • 制造商

    Renesas

  • 功能描述

    Trans MOSFET P-CH 60V 15A 3-Pin(3+Tab) DPAK(L)-(2) Box

更新时间:2025-10-5 9:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VBSEMI/台湾微碧
23+
TO-251
50000
全新原装正品现货,支持订货
HITACHI/日立
23+
SOT252
17000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
RENESAS
24+
TO-251
9000
只做原装正品 有挂有货 假一赔十
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
RENESAS
20+
TO-252
38900
原装优势主营型号-可开原型号增税票
RENESAS
25+
TO-251
8800
公司只做原装,详情请咨询
RENESAS
24+
TO-251
16900
原装正品现货支持实单
RENESAS
23+
null
7000
VBSEMI台湾微碧
23+
TO-252
22820
原装正品,支持实单
RENESAS
2023+
TO-251
8800
正品渠道现货 终端可提供BOM表配单。

2SJ530L-E数据表相关新闻