型号 功能描述 生产厂家 企业 LOGO 操作

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.12 Ω typ. • 4 V gete drive devices • High speed switching

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.12 Ω typ. • 4 V gete drive devices • High speed switching

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

文件:114.08 Kbytes Page:11 Pages

RENESAS

瑞萨

2SJ529STR-E产品属性

  • 类型

    描述

  • 型号

    2SJ529STR-E

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    Cut Tape

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    0

更新时间:2025-10-4 17:15:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
24+
TO-252
35000
绝对原装正品现货假一罚十
HITACHI/日立
24+
TO 220
158130
明嘉莱只做原装正品现货
VB
2024
TO-251
13500
16余年资质 绝对原盒原盘代理渠道 更多数量
RENESAS
25+23+
TO-252
41682
绝对原装正品全新进口深圳现货
RENESAS/瑞萨
24+
TO-252
2800
只做原厂渠道 可追溯货源
TOSHIBA
24+
66000
RENESAS
24+
TO-252
9000
只做原装正品 有挂有货 假一赔十
FUJI
18+
TO-252
85600
保证进口原装可开17%增值税发票
HITACHI
2023+
TO-252
50000
原装现货
RENESAS/瑞萨
25+
TO-252
20300
RENESAS/瑞萨原装特价2SJ529STL即刻询购立享优惠#长期有货

2SJ529STR-E数据表相关新闻