位置：首页 > IC中文资料第1934页 > 2SJ518AZTR-E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ518AZTR-E | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.35 Ω typ. (at VGS = –10 V, ID = –1 A) • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 |   | |
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.35 Ω typ. (at VGS = –10 V, ID = –1 A) • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.35 Ω typ. at (VGS = –10V, ID = –1A) • Low drive current • 4 V gate drive devices • High speed switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
P-Channel 60-V (D-S) MOSFET 文件：959.08 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.35 Ω typ. (at VGS = –10 V, ID = –1 A) • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | |
2SJ518AZTR-E产品属性
- 类型
描述
- 型号
2SJ518AZTR-E
- 制造商
Renesas Electronics Corporation
- 功能描述
Trans MOSFET P-CH 60V 2A 4-Pin(3+Tab) UPAK T/R Cut Tape
- 制造商
Renesas Electronics Corporation
- 功能描述
Pch MOSFET,60V,2A,0.35ohm,UPAK
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENE |
24+ |
NA |
990000 |
明嘉莱只做原装正品现货 |
|||
CCSEMI/芯能圆 |
23+ |
SOT-89 |
50000 |
原装正品 支持实单 |
|||
Renesas(瑞萨) |
23+ |
原厂封装 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
|||
Renesas |
21+ |
- |
10 |
全新原装鄙视假货 |
|||
RENESAS/瑞萨 |
2025+ |
SOT-89 |
5000 |
原装进口价格优 请找坤融电子! |
|||
RENESAS/瑞萨 |
2450+ |
SOT89 |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
|||
RENESAS |
26+ |
SOT89 |
360000 |
进口原装现货 |
|||
RENESAS |
2016+ |
SOT-89 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
RENESAS |
05+ |
SOT89 |
1005 |
||||
RENESAS |
24+ |
SOT89 |
64580 |
原装现货假一赔十 |
2SJ518AZTR-E规格书下载地址
2SJ518AZTR-E参数引脚图相关
- 500t
- 5000
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2SJ518AZTR-E数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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