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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ518AZTR-E | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.35 Ω typ. (at VGS = –10 V, ID = –1 A) • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 |   | |
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.35 Ω typ. (at VGS = –10 V, ID = –1 A) • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.35 Ω typ. at (VGS = –10V, ID = –1A) • Low drive current • 4 V gate drive devices • High speed switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
P-Channel 60-V (D-S) MOSFET 文件：959.08 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.35 Ω typ. (at VGS = –10 V, ID = –1 A) • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | |
2SJ518AZTR-E产品属性
- 类型
描述
- 型号
2SJ518AZTR-E
- 制造商
Renesas Electronics Corporation
- 功能描述
Trans MOSFET P-CH 60V 2A 4-Pin(3+Tab) UPAK T/R Cut Tape
- 制造商
Renesas Electronics Corporation
- 功能描述
Pch MOSFET,60V,2A,0.35ohm,UPAK
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Renesas(瑞萨) |
24+ |
标准封装 |
9548 |
支持大陆交货,美金交易。原装现货库存。 |
|||
CCSEMI/芯能圆 |
24+ |
NA/ |
4430 |
原装现货,当天可交货,原型号开票 |
|||
RENESAS |
2016+ |
SOT-89 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
RENESAS/瑞萨 |
22+ |
SOT89 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENE |
24+ |
NA |
990000 |
明嘉莱只做原装正品现货 |
|||
Sanyo |
25+23+ |
To-252 |
29058 |
绝对原装正品全新进口深圳现货 |
|||
RENESAS/瑞萨 |
2025+ |
SOT-89 |
5000 |
原装进口价格优 请找坤融电子! |
|||
SANYO |
24+ |
66000 |
|||||
CCSEMI/芯能圆 |
24+ |
SOT-89 |
9600 |
原装现货,优势供应,支持实单! |
|||
RENESAS/瑞萨 |
2447 |
SOT-89 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
2SJ518AZTR-E芯片相关品牌
2SJ518AZTR-E规格书下载地址
2SJ518AZTR-E参数引脚图相关
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2SJ518AZTR-E数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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