位置：首页 > IC中文资料第465页 > 2SJ201-Y(F)
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
PCHANNELMOSTYPE(HIGHPOWERAMPLIFIERAPPLICATIONS) High-PowerAmplifierApplication Highbreakdownvoltage:VDSS=−200V Highforwardtransferadmittance:|Yfs|=5.0S(typ.) Complementaryto2SK1530 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |  |   | |
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
High-PowerAmplifierApplication High-PowerAmplifierApplication Highbreakdownvoltage:VDSS=−200V Highforwardtransferadmittance:|Yfs|=5.0S(typ.) Complementaryto2SK1530 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
High-PowerAmplifierApplication 文件：448.62 Kbytes Page：5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
High-PowerAmplifierApplication 文件：275.09 Kbytes Page：5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | |
2SJ201-Y(F)产品属性
- 类型
描述
- 型号
2SJ201-Y(F)
- 功能描述
MOSFET MOSFET P-Ch 200V 12A Rdson 0.625 Ohm
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
2339+ |
TO-3P(L)/Out |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
TOSHIBA/东芝 |
23+ |
NA/ |
197 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
TOSHIBA(东芝) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
VISHAV |
23+ |
TO-92 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
TOSHIBA |
23+ |
TO-92 |
1500 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
TOSHIBA/东芝 |
22+ |
TO-3P |
12245 |
现货,原厂原装假一罚十! |
|||
TOSHIBA/东芝 |
19+ |
TO-3PL |
1200 |
进口原装现货 |
|||
TOSHIBA |
2020+ |
TO-3PL |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
TOSHIBA/东芝 |
2022 |
TO-3PL |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
HITACHI |
08PB |
60000 |
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2SJ201-Y(F)规格书下载地址
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2019-10-30
DdatasheetPDF页码索引
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