2SD63晶体管资料

  • 2SD63别名:2SD63三极管、2SD63晶体管、2SD63晶体三极管

  • 2SD63生产厂家:日本索尼公司

  • 2SD63制作材料:Ge-NPN

  • 2SD63性质:低频或音频放大 (LF)_开关管 (S)

  • 2SD63封装形式:直插封装

  • 2SD63极限工作电压:25V

  • 2SD63最大电流允许值:0.1A

  • 2SD63最大工作频率:<1MHZ或未知

  • 2SD63引脚数:3

  • 2SD63最大耗散功率:0.12W

  • 2SD63放大倍数

  • 2SD63图片代号:C-62

  • 2SD63vtest:25

  • 2SD63htest:999900

  • 2SD63atest:0.1

  • 2SD63wtest:0.12

  • 2SD63代换 2SD63用什么型号代替:AC127,AC176,AC178,2N1302,2SD30,3BX31B,

型号 功能描述 生产厂家 企业 LOGO 操作

POWER TRANSISTORS(7A,40W)

7 AMPERE DARLINGTON POWER TRANSISTORS NPN SILICON 60-100 VOLTS 40 WATTS

MOSPEC

统懋

NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)

High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications.

TOSHIBA

东芝

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • Complement to type 2SB673/675 • DARLINGTON • High DC current gain • Low saturation voltage APPLICATIONS • High power switching • Hammer drive,pulse motor drive

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • Complement to type 2SB673/675 • DARLINGTON • High DC current gain • Low saturation voltage APPLICATIONS • High power switching • Hammer drive,pulse motor drive

SAVANTIC

SILICON NPN TRIPLE DIFFUSED MESA DARLINGTON TRANSISTOR

SILICON NPN TRIPLE DIFFUSED MESA DARLINGTON TRANSISTOR

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High DC Current Gain : hFE= 2000(Min.) @IC= 3.0A • Low Saturation Voltage : VCE(sat)= 1.5V(Max.)@ IC= 3.0A • Complement to Type 2SB674 APPLICATIONS • High power switching applications. • Hammer drive, pulse motor drive applications.

ISC

无锡固电

POWER TRANSISTORS(7A,40W)

7 AMPERE DARLINGTON POWER TRANSISTORS NPN SILICON 60-100 VOLTS 40 WATTS

MOSPEC

统懋

POWER TRANSISTORS(7A,40W)

7 AMPERE DARLINGTON POWER TRANSISTORS NPN SILICON 60-100 VOLTS 40 WATTS

MOSPEC

统懋

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • Complement to type 2SB673/675 • DARLINGTON • High DC current gain • Low saturation voltage APPLICATIONS • High power switching • Hammer drive,pulse motor drive

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • Complement to type 2SB673/675 • DARLINGTON • High DC current gain • Low saturation voltage APPLICATIONS • High power switching • Hammer drive,pulse motor drive

SAVANTIC

Silicon NPN epitaxial planer type

For low-power general amplification ■ Features ● High foward current transfer ratio hFE. ● Low collector to emitter saturation voltage VCE(sat). ● M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

Panasonic

松下

Silicon NPN epitaxial planer type(For medium-power general amplification)

Silicon NPN epitaxial planer type For medium-power general amplification Complementary to 2SB643 and 2SB644 ■Features ● Low collector to emitter saturation voltage VCE(sat). ● M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed

Panasonic

松下

Silicon PNP epitaxial planer type(For low-power general amplification)

For low-frequency general amplification ■Features •M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

Panasonic

松下

Silicon NPN epitaxial planer type(For medium-power general amplification)

Silicon NPN epitaxial planer type For medium-power general amplification Complementary to 2SB643 and 2SB644 ■Features ● Low collector to emitter saturation voltage VCE(sat). ● M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed

Panasonic

松下

Silicon PNP epitaxial planer type(For low-power general amplification)

For low-frequency general amplification ■Features •M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

Panasonic

松下

Silicon NPN Power Transistor

文件:266.98 Kbytes Page:2 Pages

ISC

无锡固电

V(cbo): 100V; V(ceo): 85V; V(ebo): 6V; 6A; 60W; epitaxial planar silicon transistor. For 85V/6A, AF 35 to 45W output applications

ONSEMI

安森美半导体

7 AMPERE DARLINGTON POWER TRANSISTORS NPN SILICON 60-100 VOLTS 40 WATTS

MOSPEC

统懋

Trans Darlington NPN 60V 7A 3-Pin(3+Tab) TO-220AB

ETC

知名厂家

NPN Transistor

文件:60.72 Kbytes Page:1 Pages

Panasonic

松下

NPN Transistor

文件:60.72 Kbytes Page:1 Pages

Panasonic

松下

For Medium-Power General Amplification

文件:73.1 Kbytes Page:3 Pages

Panasonic

松下

2SD63产品属性

  • 类型

    描述

  • 型号

    2SD63

  • 制造商

    TOSHIBA

  • 制造商全称

    Toshiba Semiconductor

  • 功能描述

    NPN TRIPLE DIFFUSED TYPE(HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)

更新时间:2025-12-24 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
24+
NA/
380
优势代理渠道,原装正品,可全系列订货开增值税票
TOSHIBA/东芝
25+
TO-220
860000
明嘉莱只做原装正品现货
TOSHIBA/东芝
20+
TO-3
35830
原装优势主营型号-可开原型号增税票
N/A
24+/25+
2762
原装正品现货库存价优
TOSHIBA/东芝
25+
TO220
9800
全新原装现货,假一赔十
TOSHIBA/东芝
2223+
TO-220
26800
只做原装正品假一赔十为客户做到零风险
PANASONIC
原厂封装
9800
原装进口公司现货假一赔百
TOSHIBA/东芝
TO-3
1005
优势库存
24+
TO-220
10000
全新
PANASONIC
22+
TO92F
20000
公司只有原装 品质保证

2SD63数据表相关新闻