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2SD313R

TRANSISTOR

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NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

LOW FREQUENCY POWER AMPLIFIER Complement to 2SB507

WINGS

永盛电子

Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1.75 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TEL

PLANAR TYPE SILICON TRANSISTOR FOR AF POWER AMPLIFIER USE

Planar Rtpe Silicon Transistor For AF POWER Amplifier Use

SANYO

三洋

NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2SD313 is designed for use in general purpose amplifier and switching applications.

UTC

友顺

POWER TRANSISTORS(3A,60V,30W)

3 AMPERE POWER TRANSISTOR 60 VOLT 30 WATTS

MOSPEC

统懋

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