Silicon NPN epitaxial planer type(For low-frequency amplification)

Silicon NPN epitaxial planar type For low-frequency driver amplification ■ Features • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • High emitter-base voltage (Collector open) VEBO

Silicon NPN epitaxial planer type(For low-frequency amplification)

Silicon NPN epitaxial planar type For low-frequency driver amplification ■ Features • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • High emitter-base voltage (Collector open) VEBO

Silicon NPN epitaxial planar type For low-frequency driver amplification

Silicon NPN epitaxial planar type For low-frequency driver amplification ■ Features • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • High emitter-base voltage (Collector open) VEBO

For low-frequency amplification

Silicon NPN epitaxial planar type For low-frequency amplification ■ Features • Low ON resistance Ron • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.

Silicon NPN epitaxial planar type For low-frequency amplification

Silicon NPN epitaxial planar type For low-frequency amplification ■ Features • Two elements incorporated into one package (Emitter-coupled transistors) • Reduction of the mounting area and assembly cost by one half

Color TV Horizontal Deflection Output Applications

• High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode.

Color TV Horizontal Deflection Output Applications

Color TV Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode.

Color TV Horizontal Deflection Output Applications

Color TV Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode.

Silicon NPN epitaxial planar type

Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

封装/外壳：SC-89，SOT-490 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 100V 0.02A SSMINI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

封装/外壳：SOT-723 包装：散装 描述：TRANS NPN 100V 0.02A SSSMINI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Transistor in a TO-3P Plastic Package

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Silicon NPN Transistor in a TO-3P Plastic Package

文件：881.41 Kbytes Page：6 Pages

Silicon NPN Transistor in a TO-3P Plastic Package

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