isc Silicon NPN Power Transistor

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Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio)

Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio ■ Features • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Allowing supply with the radial taping

Silicon NPN triple diffusion planar type(For power amplification)

For power amplification ■Features ● High forward current transfer ratio hFEwhich has satisfactorylinearity ● Low collector to emitter saturation voltage VCE(sat) ● Full-pack package which can be installed to the heat sink with one screw

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO = 80V(Min) ·Low Collector Saturation Voltgae : VCE(sat)= 0.7V(Max.)@ IC= 3A ·Good Linearity of hFE APPLICATIONS ·Designed for power amplifier applications.

Power Device - Power Transistors - Others

Power Device - Power Transistors - General-Purpose power amplification

封装/外壳：TO-220-3 整包 包装：散装 描述：TRANS NPN 80V 3A TO220D-A1 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个