NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR COLOR TVs)

HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV ● High Voltage : VCBO= 1500 V ● Low Saturation Voltage : VCE (sat)= 3 V (Max.) ● High Speed : tf= 0.35µs (Typ.) ● Collector Metal (Fin) is Fully Covered with Mold Resin.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3P(H)IS package • High speed • High voltage • Low saturation voltage APPLICATIONS • Horizontal deflection output for color TV

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type For low-frequency power amplification ■ Features • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High voltage ,high speed APPLICATIONS • For color TV horizontal deflection output applications

isc Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage- ： VCBO= 1700V (Min) • High Switching Speed • Low Saturation Voltage • Built-in Damper Diode APPLICATIONS • Designed for horizontal deflection output applications.

TOSHIBA TRANSTOR SILICON NPN TRIPLE DIFFUSED TYPE

AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS

丝印代码：D2525；High DC current gain: 100 (min)

Audio Frequency Power Amplifier Applications • High DC current gain: 100 (min) • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) • Complementary to 2SB1640

High DC current gain: 100 (min)

Audio Frequency Power Amplifier Applications • High DC current gain: 100 (min) • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) • Complementary to 2SB1640

NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)

High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) • Complementary to 2SB1641

Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio)

Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio ■Features ● High foward current transfer ratio hFE ● Satisfactory linearity of foward current transfer ratio hFE ● Full-pack package which can be installed to the heat sink wi

Silicon NPN epitaxial planar type(For power amplification with high forward current transfer ratio)

Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio ■ Features • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw

Silicon NPN triple diffusion planer type Darlington(For power amplification)

For power amplification ■ Features • High forward current transfer ratio hFE • Allowing supply with the radial taping • Low collector to emitter saturation voltage VCE(sat):

NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

POWER AMPLIFIER APPLICATIONS

isc Silicon NPN Power Transistor

DESCRIPTION · Low Collector Saturation Voltage- : VCE(sat)= 1.0 (Max)@ IC= 2.5A · High Power Dissipation- : PC= 25W@ TC= 25℃ APPLICATIONS · Designed for power amplifier applications

NPN EPITAXIAL TYPE (MICRO MOTOR DRIVE, HAMMER DRIVE, SWITCHING APPLICATIONS)

Switching Applications Micro Motor Drive, Hammer Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.2 V (max) (IC = 0.7 A, VBH = 4.2 V) • Zener diode included between collector

丝印代码：DV；Medium Power Transistor (25V, 1.2A)

Features 1) High DC current gain. 2) High emitter-base voltage. (VEBO=12V) 3) Low saturation voltage. (Max. VCE(sat)=0.3V at IC/IB=500mA/10mA)

丝印代码：DV；MEDIUM POWER TRANSISTOR(25V, 1.2V), GENERAL PURPOSE TRANSISTOR(50V, 0.15A)

MEDIUM POWER TRANSISTOR(25V, 1.2V) GENERAL PURPOSE TRANSISTOR(50V, 0.15A)

Medium Power Transistor

■ Features ● High DC current gain. ● High emitter-base voltage. ● Low saturation voltage.

Medium Power Transistor (25V, 1.2A)

Features 1) High DC current gain. 2) High emitter-base voltage. (VEBO=12V) 3) Low saturation voltage. (Max. VCE(sat)=0.3V at IC/IB=500mA/10mA)

Silicon NPN triple diffusion planer type Darlington(For power amplification)

Silicon NPN triple diffusion planer type Darlington For power amplification ■ Features • High forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV)

HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV ● High Voltage : VCBO = 1500 V ● Low Saturation Voltage : VCE (sat) = 5 V (Max.) ● High Speed : tf = 0.3 µs (Typ.) ● Bult-in Damper Type ● Collector Metal (Fin) is Fully Covered with Mold Resin.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3P(H)IS package • High voltage ;high speed • Low saturation voltage • Bult-in damper diode APPLICATIONS • Horizontal deflection output for color TV

Silicon NPN Power Transistors

DESCRIPTION • With TO-3P(H)IS package • High voltage ;high speed • Low saturation voltage • Bult-in damper diode APPLICATIONS • Horizontal deflection output for color TV

Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio)

Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio ■ Features • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Allowing supply with the radial taping

Silicon NPN triple diffusion planar type(For power amplification)

For power amplification ■Features ● High forward current transfer ratio hFEwhich has satisfactorylinearity ● Low collector to emitter saturation voltage VCE(sat) ● Full-pack package which can be installed to the heat sink with one screw

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO = 80V(Min) ·Low Collector Saturation Voltgae : VCE(sat)= 0.7V(Max.)@ IC= 3A ·Good Linearity of hFE APPLICATIONS ·Designed for power amplifier applications.

isc Silicon NPN Power Transistor

DESCRIPTION ·High Breakdown Voltage- ： VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal deflection applications.

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV)

HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV)

HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV

isc Silicon NPN Power Transistor

DESCRIPTION ·High Breakdown Voltage- ： VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal deflection applications.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3P(H)IS package ·High voltage;high speed ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for high resolution display,color TV ·High speed switching applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3P(H)IS package ·High voltage;high speed ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for high resolution display,color TV ·High speed switching applications

SILICON NPN TRIPLE DIFFUSED MESA TYPE

DESCRIPTION HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

HORIZONTAL DEFLECTION OUTPUT FOR HIGH ESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS

Silicon NPN epitaxial planer type(For power switching)

For power switching ■ Features • High forward current transfer ratio hFE • Allowing supply with the radial taping • Low collector to emitter saturation voltage VCE(sat):

Silicon NPN Triple Diffused Planar Transistor(Series Regulator and General Purpose)

Silicon NPN Triple Diffused Planar Transistor Application : Series Regulator and General Purpose

Silicon NPN Darlington Power Transistors

DESCRIPTION ·With TO-3PN package ·DARLINGTON APPLICATIONS ·Series regulator and general purpose

Silicon NPN Darlington Power Transistors

DESCRIPTION ·With TO-3PN package ·DARLINGTON APPLICATIONS ·Series regulator and general purpose

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High DC Current Gain- : hFE= 1500( Min.) @(IC= 1A, VCE= 5V) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 1A, IB= 5mA) B APPLICATIONS ·Designed for series regulator and gene

Silicon NPN Triple Diffused Planar Transistor(Series Regulator and General Purpose)

Application : Series Regulator and General Purpose

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV)

This Device is Horizontal Deflection Output For Color TV.

isc Silicon NPN Power Transistor

DESCRIPTION 0. NPN Power Transistor 1. High Breakdown Voltage : V CBO= 1500V (Min) 2. High Switching Speed 3. Low Saturation Voltage 4. Built-in Damper Diode

Silicon NPN Darlington Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type 2SB1647 APPLICATIONS ·Audio ,regulator and general purpose

Silicon NPN Darlington Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type 2SB1647 APPLICATIONS ·Audio ,regulator and general purpose

Silicon NPN Triple Diffused Planar Transistor(Audio, Series Regulator and General Purpose)

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1647) Application : Audio, Series Regulator and General Purpose

Silicon NPN Triple Diffused Planar Transistor(Audio, Series Regulator and General Purpose)

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1648) Application : Audio, Series Regulator and General Purpose

Silicon NPN Darlington Power Transistors

DESCRIPTION ·With MT-200 package ·Complement to type 2SB1648 APPLICATIONS ·Audio, series regulator and general purpose

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) • High DC Current Gain- : hFE= 5000( Min.) @(IC= 10A, VCE= 4V) • Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 10A, IB= 10mA) B • Complement to Type 2SB1649 APPLICATIONS • Designed for series regulator a

Silicon NPN Triple Diffused Planar Transistor

[SANKEN] Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1649) Application : Audio, Series Regulator and General Purpose

Silicon NPN Triple Diffused Planar Transistor

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1649) Application : Audio, Series Regulator and General Purpose

Silicon NPN triple diffusion planer type(For high voltage-withstand switching)

Silicon NPN triple diffusion planer type For high voltage-withstand switching ■ Features ● High collector to base voltage VCBO. ● High collector to emitter voltage VCEO. ● Large collector power dissipation PC. ● Low collector to emitter saturation voltage VCE(sat). ● M type package allowing

丝印代码：TL；Power Transistor (400V, 0.5A)

Features 1) High breakdown voltage.(BVCEO=400V)

NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)

High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications ● High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) ● Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A)

Silicon NPN triple diffusion planar type

Silicon NPN triple diffusion planar type For high current amplification, power amplification ■ Features • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping

Silicon NPN epitaxial planer type(For low-frequency power amplification)

Silicon NPN epitaxial planer type For low-frequency power amplification ■ Features ● Low collector to emitter saturation voltage VCE(sat).

Power Transistor (60V, 3A)

Color TV Horizontal Deflection Output Applications

· High speed. · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. · On-chip damper diode.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High speed ·High breakdown voltage ·Built-in damper diode APPLICATIONS ·Color TV horizontal deflection output

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High speed ·High breakdown voltage ·Built-in damper diode APPLICATIONS ·Color TV horizontal deflection output

Color TV Horizontal Deflection Output Applications

Color TV Horizontal Deflection Output Applications Features · High speed. · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process.