NPN TRIPLE DIFFUSED TYPE (SWITHCING APPLICATIONS)

Switching Application High breakdown voltage: VCBO = 100 V : VEBO = 18 V Low saturation voltage: VCE (sat) = 1.2 V (max) (IC = 5 A, IB = 1 A) High speed: tf = 1 µs (typ.) (IC = 5 A, IB = ±0.5 A) High DC current gain: hFE = 200 (min) (VCE = 5 V, IC

Silicon NPN epitaxial planer type(For low-frequency output amplification)

Silicon NPN epitaxial planer type For low-frequency output amplification ■ Features ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

Silicon NPN Epitaxial Planar Type

Features ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

Power Transistor

Features ● IC = 1A. ● Low saturation voltage.

Power Transistor (15V,1A)

Features 1)Low saturation voltage, 　 VCE(sat)=0.3V(Max.) at IC/IB=400mA/20mA 2)IC=1A. 3)Complements the 2SB1590K. Application LOW FREQUENCY POWER AMPLIFIER

Power Transistor (15V, 1A)

Features 1) Low saturation voltage, VCE(sat)=0.3V(Max.) at IC/IB=400mA/20mA 2) IC=1A. 3) Complements the 2SB1590K. Application LOW FREQUENCY POWER AMPLIFIER

Power Transistor (15V,1A)

Features 1)Low saturation voltage, 　 VCE(sat)=0.3V(Max.) at IC/IB=400mA/20mA 2)IC=1A. 3)Complements the 2SB1590K. Application LOW FREQUENCY POWER AMPLIFIER

Power Transistor (15V,1A)

Features 1)Low saturation voltage, 　 VCE(sat)=0.3V(Max.) at IC/IB=400mA/20mA 2)IC=1A. 3)Complements the 2SB1590K. Application LOW FREQUENCY POWER AMPLIFIER

TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE

Power Amplifier Applications ● High breakdown voltage: VCEO = 160 V (min) ● Complementary to 2SB1594

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 160V(Min) ·High DC Current Gain-: hFE= 3000( Min.) @(IC= 8A, VCE= 5V) ·Low Collector Saturation Voltage- : VCE(sat)= 3.0V(Max)@ (IC= 8A, IB= 8mA) B ·Complement to Type 2SB1594 APPLICATIONS ·Designed for power amplifie

Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

封装/外壳：TO-243AA 包装：散装 描述：TRANS NPN 10V 1.5A MINIP3-F1 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Low VCE(sat) Transistor

Power Transistor (15V, 1A)

文件：74.49 Kbytes Page：3 Pages

Power Transistor (15V, 1A)

文件：74.49 Kbytes Page：3 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS NPN 15V 1A SMT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) Power Amplifier Applications