NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

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Silicon NPN Power Transistors

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Silicon NPN Power Transistors

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NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

NPN 150mA 50V Muting Transistors

Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Lowsaturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)

General Purpose Transistor

Features ● High DC current gain. ● High emitter-base voltage. (VCBO=12V) ● Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)

General Purpose Transistor (50V, 0.15A)

Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Lowsaturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)

MEDIUM POWER TRANSISTOR(25V, 1.2V), GENERAL PURPOSE TRANSISTOR(50V, 0.15A)

MEDIUM POWER TRANSISTOR(25V, 1.2V) GENERAL PURPOSE TRANSISTOR(50V, 0.15A)

NPN 150mA 50V Muting Transistors

Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Lowsaturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)

NPN 150mA 50V Muting Transistors

Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Lowsaturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)

丝印代码：BJ；General Purpose Transistor (50V, 150mA)

Features 1)High DC current gain. 2)High emitter-base voltage. (VCBO=12V) 3)Low saturation voltage. (Max. VCE(sat)=300mV at IC/ IB=50mA/5mA) Application LOW FREQUENCY AMPLIFIER

NPN, SOT-323, 50V 150mA, High hFE Transistor

Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market. • High DC current gain.\n• High emitter-base voltage.(VCBO=12V)\n• Low saturation voltage. (Max. VCE(sat)=300mV at IC/ IB=50mA/5mA);

Transistor Silicon NPN Triple Diffused Type

Transistor   Silicon NPN Triple Diffused Type\nPower Amplifier

NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

Transistor Silicon NPN Triple Diffused Type Power Amplifier Applications • High DC current gain: hFE= 800 to 3200 • Low collector saturation voltage: VCE (sat)= 0.3 V (typ.)

NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

1. High DC Current Gain : hFE = 800 ~ 3200 2. Low Collector Saturation Voltage : Vce(sat) = 0.4V (Typ.)

TRANSISTORS(SELECTION GUIDE BY APPLICATIONS AND FUNCTIONS)

Silicon Power Transistors for TV and Monitor Display

Silicon PNP epitaxial planer typeFor low-frequency amplification)

Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2357 ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Large collector power dissipation PC. ● Mini Power type package, allowing downsizing of the equipment and automatic insertion throug

Silicon NPN epitaxial planer type(For low-frequency amplification)

Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1537 ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Large collector power dissipation PC. ● Mini Power type package, allowing downsizing of the equipment and automatic insertion th

Silicon NPN Epitaxial Planar Type

Features ● Low collector-emitter saturation voltage VCE(sat). ● Large collector power dissipation PC. ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

Silicon NPN epitaxial planer type(For low-frequency output amplification)

For low-frequency output amplification Complementary to 2SB1538 ■ Features • Low collector to emitter saturation voltage VCE(sat): 0.15 V • Allowing supply with the radial taping

Silicon NPN Epitaxial Planar Type

Features ● Low collector-emitter saturation voltage VCE(sat). ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

Silicon NPN epitaxial planer type(For low-frequency amplification)

Silicon NPN epitaxial planer type For low-frequency amplification ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

Silicon PNP epitaxial planer type(For low-frequency amplification)

Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2359 ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Large collector power dissipation PC. ● Mini Power type package, allowing downsizing of the equipment and automatic insertion throug

封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 0.15A UMT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Power Amplifier Applications

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Power Amplifier Applications

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Silicon NPN Triple Diffused Type

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Silicon NPN transistor in a TO-220F Plastic Package.

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Silicon NPN Triple Diffused Type

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NPN Transistors

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封装/外壳：3-SIP 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 10V 1A MT-2 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Transistors

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