NPN SILICON EPITAXIAL MESA TRANSISTOR

isc Silicon NPN Power Transistor

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2SD2180

Silicon NPN Epitaxial Planar Type AF Output Amplifier ■ Features ● Low collector-emitter saturation voltage (VCE(sat)) ● High collector current (Ic)

2SD2182

2SD2182

Silicon NPN epitaxial planer type(Silicon NPN epitaxial planer type)

Silicon NPN epitaxial planar type For low-frequency output amplification ■ Features • High collector-emitter voltage (Base open) VCEO • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping

Silicon NPN epitaxial planer type(For low-frequency output amplification)

For low-frequency output amplification Complementary to 2SB1440 ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

Silicon NPN Epitaxial Planar Type

Features ● Low collector-emitter saturation voltage VCE(sat). ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

Transistor - Silicon NPN Epitaxial Planar Type - For low-frequency output amplification - Complementary pair with 2SB1437

2SD2182

1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE

1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE

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封装/外壳：TO-243AA 包装：散装 描述：TRANS NPN 50V 3A MINIP3-F1 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-243AA 包装：管件 描述：TRANS NPN 50V 3A MINIP3-F2 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个