NPN Epitaxial Transistor

VOLTAGE 20 Volts CURRENT 5 Amperes FEATURE * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=0.25V(Typ.)(IC/IB=4A/0.1A) * High speed switching time: tstg= 1.0uSec (typ.) * PC= 2.0W (mounted on ceramic substrate). * High saturation current capability. APPLICATION * Powe

NPN Epitaxial Transistor

NPN Silicon Epitaxial Planar Tra nsistor

Description The 2SD2098 is an epitaxial planar type NPN silicon transistor. Features * Excellent DC Current Gain Characteristics * Low Saturation Voltage, Typically VCE(SAT)=0.25V At IC/IB=4A/0.1A

Excellent DC current gain characteristics Complements the 2SB1386

FEATURES Excellent DC current gain characteristics Complements the 2SB1386

Low VCE(sat) Transistor(Strobe flash)

Features 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain charac teristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436. Structure Epitaxial planar type NPN silicon transistor

NPN Plastic-Encapsulate Transistor

NPN Plastic-Encapsulate Transistor P/b Lead(Pb)-Free

Low VCE(sat) transistor (strobe flash)

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