NPN Epitaxial Transistor

VOLTAGE 20 Volts CURRENT 5 Amperes CONSTRUCTION * NPN Cilicon Transistor FEATURE * Small flat package. ( DPAK ) * Low saturation voltage VCE(sat)=0.25V(Typ.)(IC/IB=4A/0.1A) * High saturation current capability. APPLICATION * Power driver and Strobe Flash .

SMALL FLAT NPN Epitaxial Transistor

Excellent DC current gain characteristics Complements the 2SB1386

FEATURES Excellent DC current gain characteristics Complements the 2SB1386

NPN Silicon Epitaxial Planar Tra nsistor

Description The 2SD2098 is an epitaxial planar type NPN silicon transistor. Features * Excellent DC Current Gain Characteristics * Low Saturation Voltage, Typically VCE(SAT)=0.25V At IC/IB=4A/0.1A

NPN Plastic-Encapsulate Transistor

NPN Plastic-Encapsulate Transistor P/b Lead(Pb)-Free

Low VCE(sat) Transistor(Strobe flash)

Features 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain charac teristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436. Structure Epitaxial planar type NPN silicon transistor

Low VCE(sat) transistor (strobe flash)

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