NPN Epitaxial Transistor

VOLTAGE 20 Volts CURRENT 5 Amperes CONSTRUCTION * NPN Cilicon Transistor FEATURE * Small flat package. ( DPAK ) * Low saturation voltage VCE(sat)=0.25V(Typ.)(IC/IB=4A/0.1A) * High saturation current capability. APPLICATION * Power driver and Strobe Flash .

SMALL FLAT NPN Epitaxial Transistor

VOLTAGE 20 Volts CURRENT 5 AmperesCONSTRUCTION\n* NPN Cilicon TransistorFEATURE\n* Small flat package. ( DPAK )\n* Low saturation voltage VCE(sat)=0.25V(Typ.)(IC/IB=4A/0.1A)\n* High saturation current capability.APPLICATION\n* Power driver and Strobe Flash .

Low VCE(sat) Transistor(Strobe flash)

Features 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain charac teristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436. Structure Epitaxial planar type NPN silicon transistor

NPN Plastic-Encapsulate Transistor

NPN Plastic-Encapsulate Transistor P/b Lead(Pb)-Free

NPN Plastic-Encapsulate Transistor

NPN Plastic-Encapsulate Transistor P/b Lead(Pb)-Free

NPN Plastic-Encapsulate Transistor

NPN Plastic-Encapsulate Transistor P/b Lead(Pb)-Free

Low VCE(sat) transistor (strobe flash)

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