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2SD205晶体管资料
2SD205别名：2SD205三极管、2SD205晶体管、2SD205晶体三极管
2SD205生产厂家：日本日电公司
2SD205制作材料：Si-NPN
2SD205性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2SD205封装形式：贴片封装
2SD205极限工作电压：60V
2SD205最大电流允许值：0.7A
2SD205最大工作频率：<1MHZ或未知
2SD205引脚数：3
2SD205最大耗散功率：7W
2SD205放大倍数：
2SD205图片代号：E-36
2SD205vtest：60
2SD205htest：999900
- 2SD205atest：0.7
2SD205wtest：7
2SD205代换 2SD205用什么型号代替：BD137,BD167,BD177,BD228,BD235,BD439,BD517,BD525,3DD50C,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Driver Applications???????
| SANYO 三洋 |   | ||
Silicon NPN epitaxial planar type Darlington(For low-frequency amplification) Silicon NPN epitaxial planar type Darlington For low-frequency amplification ■ Features ● High foward current transfer ratio hFE ● Incorporating a built-in zener diode ● Full-pack package which can be installed to the heat sink with one screw | PANASONIC 松下 | | ||
Silicon NPN triple diffusion planar type(For high power amplification) For high power amplification Complementary to 2SB1361 ■Features ● Satisfactory foward current transfer ratio hFE vs. collector current ICcharacteristics ● Wide area of safe operation (ASO) ● High transition frequency fT ● Optimum for the output stage of a HiFi audio amplifier | PANASONIC 松下 | | ||
isc Silicon NPN Power Transistor DESCRIPTION ·High Current-Gain Bandwidth Product ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1361 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplification, optimum for the outpu | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·Wide area of safe operation ·Complement to type 2SB1361 APPLICATIONS ·Optimum for the output stage of a HiFi audio amplifier | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Wide area of safe operation ·Complement to type 2SB1362 APPLICATIONS ·For high power amplifier applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Wide area of safe operation ·Complement to type 2SB1362 APPLICATIONS ·For high power amplifier applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • High voltage,high speed • Built-in damper diode • Wide area of safe operation APPLICATIONS • Horizontal deflection output applications | SAVANTIC | | ||
Silicon NPN triple diffusion planar type For horizontal deflection output Silicon NPN triple diffusion planar type For horizontal deflection output ■ Features ● Incorporating a built-in damper diode ● Reduction of a parts count and simplification of a circuit are allowed ● High breakdown voltage with high reliability ● High-speed switching ● Wide area of safe ope | PANASONIC 松下 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • High voltage,high speed • Built-in damper diode • Wide area of safe operation APPLICATIONS • Horizontal deflection output applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220F package • Complement to type 2SB1366 • Low collector saturation voltage: VCE(SAT)=1.0V(Max) at IC=2A,IB=0.2A • Collector power dissipation: PC=25W(TC=25°C) APPLICATIONS • With general purpose applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220F package • Complement to type 2SB1366 • Low collector saturation voltage: VCE(SAT)=1.0V(Max) at IC=2A,IB=0.2A • Collector power dissipation: PC=25W(TC=25°C) APPLICATIONS • With general purpose applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SB1367 ·Low collector saturation voltage: VCE(SAT)=2.0V(Max) at IC=4A,IB=0.4A ·Collector power dissipation: PC=30W(TC=25) APPLICATIONS ·With general purpose applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SB1367 ·Low collector saturation voltage: VCE(SAT)=2.0V(Max) at IC=4A,IB=0.4A ·Collector power dissipation: PC=30W(TC=25℃) APPLICATIONS ·With general purpose applications | ISC 无锡固电 | | ||
isc Silicon NPN Darlington Power Transistor 文件：263.4 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power Device - Power Transistors - Others | PANASONIC 松下 | | ||
Silicon NPN triple diffusion planar type(For high power amplification) | PANASONIC 松下 | | ||
Silicon NPN Power Transistors 文件：122.37 Kbytes Page：3 Pages | SAVANTIC | | ||
For high power amplification | PANASONIC 松下 | | ||
Silicon NPN Power Transistors 文件：140.48 Kbytes Page：3 Pages | SAVANTIC | | ||
isc Silicon NPN Power Transistor 文件：256.95 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Silicon NPN Power Transistors 文件：120.79 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：245.74 Kbytes Page：4 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：239.1 Kbytes Page：4 Pages | SAVANTIC | | ||
isc Silicon NPN Power Transistor 文件：310.66 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc Silicon NPN Power Transistor 文件：310.66 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
2SC3229 文件：177.97 Kbytes Page：5 Pages | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 | |
2SD205产品属性
- 类型
描述
- 型号
2SD205
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MAT |
22+ |
TO-3PF |
20000 |
公司只有原装 品质保证 |
|||
24+ |
TOP-3FA |
10000 |
全新 |
||||
MAT |
05+ |
TO-3PF |
1638 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
PANASONIC/松下 |
22+ |
TO-3PF |
6000 |
十年配单,只做原装 |
|||
MAT |
23+ |
TO-3PF |
1638 |
全新原装正品现货,支持订货 |
|||
MAT |
23+ |
TO-3PF |
50000 |
全新原装正品现货,支持订货 |
|||
MAT |
24+ |
TO-3PF |
5000 |
只做原装公司现货 |
2SD205规格书下载地址
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2SD205数据表相关新闻
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2019-2-15
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