2SD191晶体管资料

  • 2SD191别名:2SD191三极管、2SD191晶体管、2SD191晶体三极管

  • 2SD191生产厂家:日本东芝公司

  • 2SD191制作材料:Ge-NPN

  • 2SD191性质:低频或音频放大 (LF)

  • 2SD191封装形式:直插封装

  • 2SD191极限工作电压:30V

  • 2SD191最大电流允许值:0.15A

  • 2SD191最大工作频率:<1MHZ或未知

  • 2SD191引脚数:3

  • 2SD191最大耗散功率:0.15W

  • 2SD191放大倍数

  • 2SD191图片代号:D-9

  • 2SD191vtest:30

  • 2SD191htest:999900

  • 2SD191atest:0.15

  • 2SD191wtest:0.15

  • 2SD191代换 2SD191用什么型号代替:AC127,AC176,AC187,2N1302,2SD352,3BX31B,

2SD191价格

参考价格:¥1.8185

型号:2SD1918TLQ 品牌:Rohm 备注:这里有2SD191多少钱,2025年最近7天走势,今日出价,今日竞价,2SD191批发/采购报价,2SD191行情走势销售排行榜,2SD191报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFM package • High breakdown voltage • High speed switching • Built-in damper diode APPLICATIONS • For use in TV horizontal output applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFM package • High breakdown voltage • High speed switching • Built-in damper diode APPLICATIONS • For use in TV horizontal output applications

SAVANTIC

Silicon Diffused Power Transistor(GENERAL DESCRIPTION)

GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers

WINGS

永盛电子

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High breakdown voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in TV horizontal output applications

ISC

无锡固电

Silicon Diffused Power Transistor(GENERAL DESCRIPTION)

GENERAL DESCRIPTION High voltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers

WINGS

永盛电子

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PFM package ·High breakdown voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in TV horizontal output applications

SAVANTIC

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 60V(Min) ·Wide Area of Safe Operation ·Low Collector Saturation Voltage APPLICATIONS ·Designed for low frequency power amplifier applications.

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SB1274 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS ·60V/3A low-frequency power amplifier ·General power amplifier applications

ISC

无锡固电

60V/3A Low-Frequency Power Amplifier Applications

60V/3A Low-Frequency Power Amplifier Applications Applications •General power amplifier. Features • Wide ASO (Adoption of MBIT process). • Low saturation voltage. • High reliability. • High breakdown voltage. • Micaless package facilitating mounting.

SANYO

三洋

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SB1274 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS ·60V/3A low-frequency power amplifier ·General power amplifier applications

SAVANTIC

NPN EPITAXIAL PLANAR SILICON DARLINGTON TRANSISTOR DRIVER APPLICATIONS

Driver Applications Features • Darlington connection • High DC current gain Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control

SANYO

三洋

Power Transistor (160V , 1.5A)

ROHM

罗姆

POWER TRANSISTOR

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHM

罗姆

Silicon NPN Epitaxial

■ Features ● High breakdown voltage. ● Low collector output capacitance. ● High transition frequency ● Complementary to 2SB1275

KEXIN

科信电子

Power Transistor (160V , 1.5A)

Features 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1275.

ROHM

罗姆

Medium Power Transistor (32V, 2A)

FTR • FTL Low profile flat-package for limited spece applications. Tape type can be used on automated line. Bulk type is also available.

ROHM

罗姆

Silicon NPN Power Transistors

文件:115.13 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:114.93 Kbytes Page:3 Pages

SAVANTIC

LOW FREQUENCY POWER AMP APPLICATIONS

ONSEMI

安森美半导体

LOW FREQUENCY POWER AMP APPLICATIONS

文件:701.94 Kbytes Page:8 Pages

SANYO

三洋

双极晶体管

FOSHAN

蓝箭电子

Silicon NPN transistor in a TO-220F Plastic Package.

文件:1.0493 Mbytes Page:6 Pages

FOSHAN

蓝箭电子

Silicon NPN Power Transistors

文件:251.03 Kbytes Page:4 Pages

SAVANTIC

NPN EPITAXIAL PLANAR SILICON DARLINGTON TRANSISTOR DRIVER APPLICATIONS

ONSEMI

安森美半导体

Power Transistor (160V , 1.5A)

文件:149.66 Kbytes Page:3 Pages

ROHM

罗姆

Power Transistor (160V , 1.5A)

文件:170.63 Kbytes Page:3 Pages

ROHM

罗姆

isc Silicon NPN Power Transistor

文件:230.73 Kbytes Page:2 Pages

ISC

无锡固电

Power Transistor (160V , 1.5A)

文件:170.63 Kbytes Page:3 Pages

ROHM

罗姆

Power Transistor (160V , 1.5A)

文件:149.66 Kbytes Page:3 Pages

ROHM

罗姆

NPN Transistors

文件:1.10282 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.10282 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.10282 Mbytes Page:2 Pages

KEXIN

科信电子

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 160V 1.5A CPT3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ROHM

罗姆

2SD191产品属性

  • 类型

    描述

  • 型号

    2SD191

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY HITACHI TRANSISTORTO-3P.FM 1500V 3A 40W BCE

更新时间:2025-12-25 19:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM
24+
TO252
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
ROHM/罗姆
24+
NA/
88
优势代理渠道,原装正品,可全系列订货开增值税票
ROHM
22+
TO-252
20000
公司只有原装 品质保证
ROHM
NEW
TO-252
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
ROHM
21+
TO-252(DPAK)
21000
一级代理进口原装!长期供应!绝对优势价格(诚信经营
Rohm(罗姆)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ROHM
25+23+
TO-252
18658
绝对原装正品全新进口深圳现货
UTG
23+
TO-126
9033887
原厂授权代理,海外优势订货渠道。可提供大量库存,详
ROHM
24+
TO252
5000
全新原装正品,现货销售
SANYO
24+
TO-92S
9120

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