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2SD183晶体管资料

  • 2SD183别名:2SD183三极管、2SD183晶体管、2SD183晶体三极管

  • 2SD183生产厂家:日本富士通公司

  • 2SD183制作材料:Si-NPN

  • 2SD183性质:开关管 (S)_功率放大 (L)_低频或音频放大 (LF

  • 2SD183封装形式:特殊封装

  • 2SD183极限工作电压:100V

  • 2SD183最大电流允许值:1A

  • 2SD183最大工作频率:<1MHZ或未知

  • 2SD183引脚数:3

  • 2SD183最大耗散功率:10W

  • 2SD183放大倍数

  • 2SD183图片代号:D-112

  • 2SD183vtest:100

  • 2SD183htest:999900

  • 2SD183atest:1

  • 2SD183wtest:10

  • 2SD183代换 2SD183用什么型号代替:BD139,BD169,BD179,BD230,BD237,BD441,BD529,BD829,3DD58E,

2SD183价格

参考价格:¥1.3098

型号:2SD1834T100 品牌:Rohm 备注:这里有2SD183多少钱,2026年最近7天走势,今日出价,今日竞价,2SD183批发/采购报价,2SD183行情走势销售排行榜,2SD183报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Driver Applications?

Driver Applications Features • High DC current gain. • Large current capacity and wide ASO. • Low saturation voltage. • Micaless package facilitating mounting. Applications • Suitable for use in control of motor drivers, printer hammer drivers, relay drivers, and constant-voltage regulators

SANYO

三洋

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SB1228 • High DC current gain. • Large current capacity and wide ASO. • Low saturation voltage. • DARLINGTON APPLICATIONS • Suitable for use in control of motor drivers, printer hammer drivers,relay drivers,and constant-volta

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SB1228 • High DC current gain. • Large current capacity and wide ASO. • Low saturation voltage. • DARLINGTON APPLICATIONS • Suitable for use in control of motor drivers, printer hammer drivers,relay drivers,and constant-volta

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector Current:: IC= 5A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@IC= 3A ·Wide Area of Safe Operation APPLICATIONS ·Designed for low frequency power amplifier applications.

ISC

无锡固电

丝印代码:C7;TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHM

罗姆

isc Silicon NPN Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 4A ·High Collector Power Dissipation ·Good Linearity of hFE ·Wide Area of Safe Operation APPLICATIONS ·Designed for low frequency power amplifier applications.

ISC

无锡固电

丝印代码:C7;TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHM

罗姆

MEDIUM POWER TRANSISTOR

Features 1) Darlington connection for high DC current gain (typically, DC current gain = 15000 at VCE = 3V, IC = 0.5A) 2) High input impedance.

ROHM

罗姆

Medium Power Transistor (60V, 1A)

Features 1) Darlington connection for high DC current gain (typically, DC current gain = 15000 at VCE = 3V, IC = 0.5A) 2) High input impedance.

ROHM

罗姆

Medium Power Transistor (60V, 1A)

Features 1) Darlington connection for high DC current gain (typically, DC current gain = 15000 at VCE = 3V, IC = 0.5A) 2) High input impedance.

ROHM

罗姆

Bipolar Transistor

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • Fast switching time Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment

ONSEMI

安森美半导体

NPN Encapsulate Transistors

Features • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information) • Large Current Capacity Maximum Ratings @ 25°C

MCC

丝印代码:D1835;TO-92 Plastic-Encapsulate Transistors

FEATURES Large Current Capacity. Low Collector-to-emitter Saturation Voltage. Fast Switching Time. APPLICATIONS Voltage Regulators, Relay Drivers, Lamp Drivers, Electrical Equipment.

DGNJDZ

南晶电子

High-Current Switching Applications

Features · Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching time. Applications · Voltage regulators, relay drivers, lamp drivers, electrical equipment.

SANYO

三洋

Driver Applications

Features · Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching time. Applications · Voltage regulators, relay drivers, lamp drivers, electrical equipment.

SANYO

三洋

Driver Applications

Features · Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching time. Applications · Voltage regulators, relay drivers, lamp drivers, electrical equipment.

SANYO

三洋

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Large Current Capacity. ● Low Collector-to-emitter Saturation Voltage. ● Fast Switching Time. APPLICATIONS ● Voltage Regulators, Relay Drivers, Lamp Drivers, Electrical Equipment.

JIANGSU

长电科技

Driver Applications

Features · Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching time. Applications · Voltage regulators, relay drivers, lamp drivers, electrical equipment.

SANYO

三洋

Bipolar Transistor

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • Fast switching time Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment

ONSEMI

安森美半导体

Bipolar Transistor

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • Fast switching time Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment

ONSEMI

安森美半导体

Bipolar Transistor

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • Fast switching time Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment

ONSEMI

安森美半导体

Bipolar Transistor

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • Fast switching time Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment

ONSEMI

安森美半导体

Bipolar Transistor

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • Fast switching time Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment

ONSEMI

安森美半导体

Bipolar Transistor

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • Fast switching time Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment

ONSEMI

安森美半导体

丝印代码:D1835;TO-92 Plastic-Encapsulate Transistors

FEATURES Large Current Capacity. Low Collector-to-emitter Saturation Voltage. Fast Switching Time. APPLICATIONS Voltage Regulators, Relay Drivers, Lamp Drivers, Electrical Equipment.

DGNJDZ

南晶电子

Bipolar Transistor

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • Fast switching time Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment

ONSEMI

安森美半导体

Bipolar Transistor

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • Fast switching time Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment

ONSEMI

安森美半导体

Driver Applications????

Driver Applications Features • High DC current gain. • Large current capacity • Wide ASO. • On-chip Zener diode of 60±10V between collector and base. • Uniformity in collector-to-base breakdown voltage due to adoption of accurate impurity diffusion process. • High inductive load handling ca

SANYO

三洋

Silicon NPN Power Transistors

文件:216.79 Kbytes Page:3 Pages

SAVANTIC

Trans GP BJT NPN 60V 5A 3-Pin(3+Tab) TO-220FP

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans GP BJT NPN 80V 7A 3-Pin(3+Tab) TO-220FP

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

双极晶体管

FOSHAN

蓝箭电子

Silicon NPN transistor in a TO-220F Plastic Package.

文件:858.8 Kbytes Page:6 Pages

FOSHAN

蓝箭电子

Medium Power Transistor (60V, 1A)

文件:136.64 Kbytes Page:3 Pages

ROHM

罗姆

Medium Power Transistor (60V, 1A)

文件:136.64 Kbytes Page:3 Pages

ROHM

罗姆

封装/外壳:TO-226-3,TO-92-3(TO-226AA)成形引线 包装:散装 描述:TRANS NPN 50V 2A TO92 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

封装/外壳:TO-226-3,TO-92-3 标准主体(!--TO-226AA) 包装:带盒(TB) 描述:TRANS NPN 50V 2A TO92 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

2SD183产品属性

  • 类型

    描述

  • Configuration:

    Single

  • Maximum Collector Base Voltage:

    80V

  • Maximum Collector Emitter Saturation Voltage:

    1@0.3A@3AV

  • Maximum Collector Emitter Voltage:

    60V

  • Maximum DC Collector Current:

    5A

  • Maximum Emitter Base Voltage:

    5V

  • Maximum Operating Temperature:

    150°C

  • Maximum Power Dissipation:

    2000mW

  • Maximum Transition Frequency:

    12(Typ)MHz

  • Type:

    NPN

更新时间:2026-5-14 11:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
23+
233888
原厂授权代理,海外优势订货渠道。可提供大量库存,详
三年内
1983
只做原装正品
26+
N/A
60000
一级代理-主营优势-实惠价格-不悔选择
PANASONIC/松下
25+
400V5A80WDR
880000
明嘉莱只做原装正品现货
POWER
23+
TO-3P
6000
专注配单,只做原装进口现货
SANYO/三洋
23+
TO-3P
50000
全新原装正品现货,支持订货
NEC
24+
4326
公司原厂原装现货假一罚十!特价出售!强势库存!
onsemi(安森美)
25+
-
20948
样件支持,可原厂排单订货!
onsemi(安森美)
25+
-
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
RENESAS瑞萨
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!

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