Driver Applications?

Driver Applications Features • High DC current gain. • Large current capacity and wide ASO. • Low saturation voltage. • Micaless package facilitating mounting. Applications • Suitable for use in control of motor drivers, printer hammer drivers, relay drivers, and constant-voltage regulators

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SB1228 • High DC current gain. • Large current capacity and wide ASO. • Low saturation voltage. • DARLINGTON APPLICATIONS • Suitable for use in control of motor drivers, printer hammer drivers,relay drivers,and constant-volta

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SB1228 • High DC current gain. • Large current capacity and wide ASO. • Low saturation voltage. • DARLINGTON APPLICATIONS • Suitable for use in control of motor drivers, printer hammer drivers,relay drivers,and constant-volta

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector Current:: IC= 5A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@IC= 3A ·Wide Area of Safe Operation APPLICATIONS ·Designed for low frequency power amplifier applications.

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

isc Silicon NPN Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 4A ·High Collector Power Dissipation ·Good Linearity of hFE ·Wide Area of Safe Operation APPLICATIONS ·Designed for low frequency power amplifier applications.

MEDIUM POWER TRANSISTOR

Features 1) Darlington connection for high DC current gain (typically, DC current gain = 15000 at VCE = 3V, IC = 0.5A) 2) High input impedance.

Medium Power Transistor (60V, 1A)

Features 1) Darlington connection for high DC current gain (typically, DC current gain = 15000 at VCE = 3V, IC = 0.5A) 2) High input impedance.

Medium Power Transistor (60V, 1A)

Features 1) Darlington connection for high DC current gain (typically, DC current gain = 15000 at VCE = 3V, IC = 0.5A) 2) High input impedance.

TO-92 Plastic-Encapsulate Transistors

FEATURES Large Current Capacity. Low Collector-to-emitter Saturation Voltage. Fast Switching Time. APPLICATIONS Voltage Regulators, Relay Drivers, Lamp Drivers, Electrical Equipment.

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Large Current Capacity. ● Low Collector-to-emitter Saturation Voltage. ● Fast Switching Time. APPLICATIONS ● Voltage Regulators, Relay Drivers, Lamp Drivers, Electrical Equipment.

Driver Applications

Features · Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching time. Applications · Voltage regulators, relay drivers, lamp drivers, electrical equipment.

Driver Applications

Features · Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching time. Applications · Voltage regulators, relay drivers, lamp drivers, electrical equipment.

High-Current Switching Applications

Features · Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching time. Applications · Voltage regulators, relay drivers, lamp drivers, electrical equipment.

NPN Encapsulate Transistors

Features • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information) • Large Current Capacity Maximum Ratings @ 25°C

Bipolar Transistor

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • Fast switching time Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment

Driver Applications

Features · Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching time. Applications · Voltage regulators, relay drivers, lamp drivers, electrical equipment.

Bipolar Transistor

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • Fast switching time Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment

Bipolar Transistor

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • Fast switching time Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment

Bipolar Transistor

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • Fast switching time Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment

Bipolar Transistor

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • Fast switching time Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment

Bipolar Transistor

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • Fast switching time Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment

Bipolar Transistor

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • Fast switching time Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment

TO-92 Plastic-Encapsulate Transistors

FEATURES Large Current Capacity. Low Collector-to-emitter Saturation Voltage. Fast Switching Time. APPLICATIONS Voltage Regulators, Relay Drivers, Lamp Drivers, Electrical Equipment.

Bipolar Transistor

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • Fast switching time Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment

Bipolar Transistor

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • Fast switching time Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment

Driver Applications????

Driver Applications Features • High DC current gain. • Large current capacity • Wide ASO. • On-chip Zener diode of 60±10V between collector and base. • Uniformity in collector-to-base breakdown voltage due to adoption of accurate impurity diffusion process. • High inductive load handling ca

Silicon NPN Power Transistors

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Trans GP BJT NPN 60V 5A 3-Pin(3+Tab) TO-220FP

Trans GP BJT NPN 80V 7A 3-Pin(3+Tab) TO-220FP

双极晶体管

Silicon NPN transistor in a TO-220F Plastic Package.

文件：858.8 Kbytes Page：6 Pages

Medium Power Transistor (60V, 1A)

文件：136.64 Kbytes Page：3 Pages

Medium Power Transistor (60V, 1A)

文件：136.64 Kbytes Page：3 Pages

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：散装 描述：TRANS NPN 50V 2A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：带盒（TB） 描述：TRANS NPN 50V 2A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个