NPN Silicon General Purpose Transistor

For low-frequency amplification■ ● High foward current transfer ratio hFE.\n● Low collector to emitter saturation voltage VCE(sat).\n● High emitter to base voltage VEBO.\n● Low noise voltage NV.\n● S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.;

Silicon NPN epitaxial planer type(For low-frequency amplification)

For low-frequency amplification ■Features ● High foward current transfer ratio hFE. ● Low collector to emitter saturation voltage VCE(sat). ● High emitter to base voltage VEBO. ● Low noise voltage NV. ● S-Mini type package, allowing downsizing of the equipment and automatic ins

Silicon NPN Epitaxial Planar Type

Features High forward current transfer ratio hFE. Low collector-emitter saturation voltage VCE(sat). High emitter-base voltage VEBO. Low noise voltage NV.