型号 功能描述 生产厂家 企业 LOGO 操作
2SD1805G-TL-E

Bipolar Transistor 20V, 5A, Low VCE(sat), NPN Single TP/TP-FA

Features • Low saturation voltage • Fast switching time • Large current capacity • Small and slim package making it easy to make 2SD1805-applied sets smaller Applications • Strobes, voltage regulators, relay drivers, lamp drivers

ONSEMI

安森美半导体

2SD1805G-TL-E

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:散装 描述:TRANS NPN 20V 5A TP-FA 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Silicon NPN Power Transistor

FEATURES ·High current capacity ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS · Strobes,voltage regulators,relay drivers,lamp drivers

ISC

无锡固电

Silicon NPN Power Transistor

FEATURES ·High current capacity ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS · Strobes,voltage regulators,relay drivers,lamp drivers

ISC

无锡固电

High-Current Switching Applications

High-Current Switching Applications Features • Low saturation voltage. • Fast switching time. • Large current capacity. • Small and slim package making it easy to make 2SD1805-applied sets smaller. Applications • Strobes, voltage regulators, relay drivers, lamp drivers.

SANYO

三洋

Bipolar Transistor 20V, 5A, Low VCE(sat), NPN Single TP/TP-FA

Features • Low saturation voltage • Fast switching time • Large current capacity • Small and slim package making it easy to make 2SD1805-applied sets smaller Applications • Strobes, voltage regulators, relay drivers, lamp drivers

ONSEMI

安森美半导体

isc Silicon NPN Power Transistor

DESCRIPTION • High current capacity • Small and slim package making it easy to make 2SD1805-used set smaller • Low collector-to-emitter saturation voltage • Fast switching speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operatio

ISC

无锡固电

2SD1805G-TL-E产品属性

  • 类型

    描述

  • 型号

    2SD1805G-TL-E

  • 功能描述

    两极晶体管 - BJT BIP NPN 5A 20V

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-10-31 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SANDISK/闪迪
24+
NA/
4100
优势代理渠道,原装正品,可全系列订货开增值税票
SANYO/三洋
25+
TO-252
54648
百分百原装现货 实单必成
原装SANYO
24+
TO-252
9000
只做原装正品现货 欢迎来电查询15919825718
SAN
25+23+
TO-252
15016
绝对原装正品全新进口深圳现货
SANYO
24+
70000
SAN
08+
TO-252
4100
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NK/南科功率
2025+
TO-252
986966
国产
原装SANYO
19+
TO-252
20000
原装现货假一罚十
三年内
1983
只做原装正品
原装SANYO
24+
TO-252
63200
一级代理/放心采购

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