80V,0.7A,General Purpose NPN Bipolar Transistor

MEDIUM POWER TRANSISTOR

Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F.

MEDIUM POWER TRANSISTOR(-80V, -0.7A)

[ROHM] Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F.

0.7A , 80V NPN Plastic Encapsulated Transistor

FEATURES • High Breakdown Voltage and Current • Excellent DC Current Gain Linearity • Complementary to 2SB1189

Medium Power Transistor

Features ● High breakdown voltage, BVCEO=80V, and high current, IC=0.7A.

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Breakdown Voltage and Current ● Excellent DC Current Gain Linearity ● Complement the 2SB1189