您好,欢迎来到114ic资料网！

芯片资料
  • 数据手册
  • 丝印反查
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第1565页 > 2SD175

2SD175晶体管资料

  • 2SD175别名：2SD175三极管、2SD175晶体管、2SD175晶体三极管

  • 2SD175生产厂家：日本富士通公司

  • 2SD175制作材料：Si-NPN

  • 2SD175性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L

  • 2SD175封装形式：直插封装

  • 2SD175极限工作电压：100V

  • 2SD175最大电流允许值：5A

  • 2SD175最大工作频率：<1MHZ或未知

  • 2SD175引脚数：2

  • 2SD175最大耗散功率：50W

  • 2SD175放大倍数：

  • 2SD175图片代号：E-44

  • 2SD175vtest：100

  • 2SD175htest：999900

  • 2SD175atest：5

  • 2SD175wtest：50

  • 2SD175代换 2SD175用什么型号代替：BD130,BD245C,BDV95,BDX10,BDX95,BDY20,BDY39,2N3055,2N5758,2N5759,3DD64D,

2SD175价格

参考价格：￥1.2235

型号：2SD1757KT146Q 品牌：Rohm 备注：这里有2SD175多少钱，2025年最近7天走势，今日出价，今日竞价，2SD175批发/采购报价，2SD175行情走势销售排行榜，2SD175报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SD1750

Silicon NPN triple diffusion planar type Darlington

For midium speed power switching Complementary to 2SB1180 and 2SB1180A ■ Features ● High foward current transfer ratio hFE ● High-speed switching ● I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.

Panasonic

松下

2SD1750A

Silicon NPN triple diffusion planar type Darlington

For midium speed power switching Complementary to 2SB1180 and 2SB1180A ■ Features ● High foward current transfer ratio hFE ● High-speed switching ● I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.

Panasonic

松下

2SD1751

Silicon NPN triple diffusion planar type(For power amplification)

Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1170 ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● I type package enabling direct soldering of the radiating f

Panasonic

松下

2SD1752

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type For power amplification and low-voltage switching Complementary to 2SB1148 and 2SB1148A ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector

Panasonic

松下

2SD1752

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHM

罗姆

2SD1752A

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type For power amplification and low-voltage switching Complementary to 2SB1148 and 2SB1148A ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector

Panasonic

松下

2SD1753

Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio)

Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio ■ Features ● High foward current transfer ratio hFE ● Satisfactory linearity of foward current transfer ratio hFE ● I type package enabling direct soldering of the radiating fin to the pr

Panasonic

松下

2SD1753

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHM

罗姆

2SD1754

Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio)

Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio ■ Features ● High foward current transfer ratio hFE ● Satisfactory linearity of foward current transfer ratio hFE ● I type package enabling direct soldering of the radiating fin to the pr

Panasonic

松下

2SD1754

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD1754

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD1754-251

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD1754-252

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD1754A

Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio)

Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio ■ Features ● High foward current transfer ratio hFE ● Satisfactory linearity of foward current transfer ratio hFE ● I type package enabling direct soldering of the radiating fin to the pr

Panasonic

松下

2SD1755

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHM

罗姆

2SD1755

Silicon NPN epitaxial planar type(For power amplification with high forward current transfer ratio)

Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● High emitter to base voltage VEBO ● I type package enabling direct soldering of the radiating fin to the p

Panasonic

松下

2SD1756

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 170V(Min) • High DC Current Gain : hFE= 1500(Min) @IC= 5A • Low Collector Saturation Voltage APPLICATIONS • Designed for high voltage high current amplifier applications.

ISC

无锡固电

2SD1757

Silicon Epitaxial Planar Transistor

FEATURES ● Low VCE(sat).(Typ.8mV at IC/IB=10/1mA). ● Optimal for muting. ● Power dissipation.PD=200mW. APPLICATIONS ● Audio frequency general.

LUGUANG

鲁光电子

2SD1757

Silicon Epitaxial Planar Transistor

FEATURES ● Low VCE(sat).(Typ.8mV at IC/IB=10/1mA). ● Optimal for muting. ● Power dissipation.PD=200mW. APPLICATIONS ● Audio frequency general.

BILIN

银河微电

2SD1757K

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● Optimal for muting.

HTSEMI

金誉半导体

2SD1757K

SOT-23 Plastic-Encapsulate Transistors

FEATURES Optimal for muting.

DGNJDZ

南晶电子

2SD1757K

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Optimal for muting.

JIANGSU

长电科技

2SD1757K

Power Transistor

Features ● Low VCE(sat). (Typ.8mV at IC/IB = 10/1mA). ● Optimal for muting.

KEXIN

科信电子

2SD1757K

Power Transistor (15V, 0.5A)

Features 1) Low VCE(sat). (Typ.8mV at IC/IB = 10/1mA) 2) Optimal for muting.

ROHM

罗姆

2SD1757KT146Q

Power Transistor (15V, 0.5A)

Features 1) Low VCE(sat). (Typ.8mV at IC/IB = 10/1mA) 2) Optimal for muting.

ROHM

罗姆

2SD1758

Medium power transistor (32V, 2A)

Features 1) Low VCE(sat). VCE(sat)= 0.5V (Typ.)(IC/IB= 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M Structure Epitaxial planar type NPN silicon transistor

ROHM

罗姆

2SD1758

Medium Power Transistor (32V, 2A)

Features 1) Low VCE(sat). VCE(sat)= 0.5V (Typ.)(IC/IB= 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M Structure Epitaxial planar type NPN silicon transistor

ROHM

罗姆

2SD1758

Medium Power Transistor

Features Low VCE(sat),VCE(sat)=0.5V (IC=2A,IB=0.2A). Epitaxial planar type NPN silicon transistor

KEXIN

科信电子

2SD1758

Medium Power Transistor (32V, 2A)

FTR • FTL Low profile flat-package for limited spece applications. Tape type can be used on automated line. Bulk type is also available.

ROHM

罗姆

2SD1758

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 32V(Min) ·DC Current Gain- : hFE= 82(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD1758

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 32V(Min) ·DC Current Gain- : hFE= 82(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD1758-251

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 32V(Min) ·DC Current Gain- : hFE= 82(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD1758-252

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 32V(Min) ·DC Current Gain- : hFE= 82(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD1759

Power transistor (40V, 2A)

Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SB1183 / 2SB1239.

ROHM

罗姆

2SD1751

Silicon NPN triple diffusion planar type(For power amplification)

Panasonic

松下

2SD1752

Power Device - Power Transistors - General-Purpose power amplification

Panasonic

松下

2SD1753

Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio)

Panasonic

松下

2SD1757KT146R

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 15V 0.5A SMT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ROHM

罗姆

2SD1757KT146S

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 15V 0.5A SMT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ROHM

罗姆

2SD1758

isc Silicon NPN Power Transistor

文件：337.56 Kbytes Page：3 Pages

ISC

无锡固电

2SD1758

Plastic-Encapsulated Transistors

文件：55.6 Kbytes Page：1 Pages

TEL

2SD1758

Medium power transistor (32V, 2A)

文件：157.31 Kbytes Page：3 Pages

ROHM

罗姆

2SD1758

TO-251-3L Plastic-Encapsulate Transistors

文件：404.23 Kbytes Page：2 Pages

JIANGSU

长电科技

2SD1758

TRANSISTOR (PNP)

文件：123.08 Kbytes Page：1 Pages

WINNERJOIN

永而佳

2SD1758

Medium power transistor (32V, 2A)

文件：176.4 Kbytes Page：4 Pages

ROHM

罗姆

2SD1758_15

NPN Transistors

文件：1.07516 Mbytes Page：2 Pages

KEXIN

科信电子

2SD1758-Q

NPN Transistors

文件：1.07516 Mbytes Page：2 Pages

KEXIN

科信电子

2SD1758-R

NPN Transistors

文件：1.07516 Mbytes Page：2 Pages

KEXIN

科信电子

2SD1758TLQ

Medium power transistor (32V, 2A)

文件：157.31 Kbytes Page：3 Pages

ROHM

罗姆

2SD1758TLR

Medium power transistor (32V, 2A)

文件：111.87 Kbytes Page：3 Pages

Littelfuse

力特

2SD175产品属性

  • 类型

    描述

  • 型号

    2SD175

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TRANSISTOR TO-3 100V 5A 50W BEC

2SD175供应商更多...

更新时间：2025-11-23 13:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市斌腾达科技有限公司
2SD1757K
ROHM
21+
SOT-346
21000
一级代理进口原装!长期供应!绝对优势价格(诚信经营
询价
深圳市安富世纪电子有限公司
2SD1755-P
PANASONIC
23+
TO263
50000
全新原装正品现货,支持订货
询价
贸泽芯城（深圳）电子科技有限公司
2SD1754A
PANASONIC/松下
23+
TO220
5700
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
艾睿（深圳）半导体有限公司
2SD1754AP
PANASONIC/松下
2447
TO-262
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
深圳市莱克讯科技有限公司
2SD1754-P
PANASONIC
1922+
TO251
12900
原装进口现货库存专业工厂研究所配单供货
询价
深圳市威尔健半导体有限公司
2SD1754A(U)-P(Y)
PANASON
23+
TO-252
50000
全新原装正品现货,支持订货
询价
深圳市一线半导体有限公司
2SD1753
SANYO
24+
60000
询价
深圳市凌旭科技有限公司
2SD1757K
ROHM
2016+
SMD
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
深圳市东来宝电子科技有限公司
2SD1755-P(Y)TX
PANASONIC/松下
24+
SOT-263
22055
郑重承诺只做原装进口现货
询价
深圳市赛美科科技有限公司
2SD1754APL
PANASONIC
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
询价

2SD175芯片相关品牌

2SD175规格书下载地址

2SD175参数引脚图相关

2SD175数据表相关新闻

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2025 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示