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2SD175晶体管资料

2SD175别名：2SD175三极管、2SD175晶体管、2SD175晶体三极管
2SD175生产厂家：日本富士通公司
2SD175制作材料：Si-NPN
2SD175性质：低频或音频放大（LF）_开关管（S）_功率放大（L
2SD175封装形式：直插封装
2SD175极限工作电压：100V
2SD175最大电流允许值：5A
2SD175最大工作频率：<1MHZ或未知
2SD175引脚数：2
2SD175最大耗散功率：50W
2SD175放大倍数：
2SD175图片代号：E-44
2SD175vtest：100
2SD175htest：999900
2SD175atest：5
2SD175wtest：50

2SD175代换 2SD175用什么型号代替：BD130,BD245C,BDV95,BDX10,BDX95,BDY20,BDY39,2N3055,2N5758,2N5759,3DD64D,

2SD175价格

参考价格：￥1.2235

型号：2SD1757KT146Q 品牌：Rohm 备注：这里有2SD175多少钱，2026年最近7天走势，今日出价，今日竞价，2SD175批发/采购报价，2SD175行情走势销售排行榜，2SD175报价。

型号	功能描述	生产厂家企业	LOGO
2SD1750	Silicon NPN triple diffusion planar type Darlington For midium speed power switching Complementary to 2SB1180 and 2SB1180A ■ Features ● High foward current transfer ratio hFE ● High-speed switching ● I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.	PANASONIC 松下	PANASONIC
2SD1750A	Silicon NPN triple diffusion planar type Darlington For midium speed power switching Complementary to 2SB1180 and 2SB1180A ■ Features ● High foward current transfer ratio hFE ● High-speed switching ● I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.	PANASONIC 松下	PANASONIC
2SD1751	Silicon NPN triple diffusion planar type(For power amplification) Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1170 ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● I type package enabling direct soldering of the radiating f	PANASONIC 松下	PANASONIC
2SD1752	Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For power amplification and low-voltage switching Complementary to 2SB1148 and 2SB1148A ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector	PANASONIC 松下	PANASONIC
2SD1752	丝印代码：C7；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)	ROHM 罗姆	ROHM
2SD1752A	Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For power amplification and low-voltage switching Complementary to 2SB1148 and 2SB1148A ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector	PANASONIC 松下	PANASONIC
2SD1753	Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio ■ Features ● High foward current transfer ratio hFE ● Satisfactory linearity of foward current transfer ratio hFE ● I type package enabling direct soldering of the radiating fin to the pr	PANASONIC 松下	PANASONIC
2SD1753	丝印代码：C7；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)	ROHM 罗姆	ROHM
2SD1754	Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio ■ Features ● High foward current transfer ratio hFE ● Satisfactory linearity of foward current transfer ratio hFE ● I type package enabling direct soldering of the radiating fin to the pr	PANASONIC 松下	PANASONIC
2SD1754	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1754	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1754-251	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1754-252	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1754A	Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio ■ Features ● High foward current transfer ratio hFE ● Satisfactory linearity of foward current transfer ratio hFE ● I type package enabling direct soldering of the radiating fin to the pr	PANASONIC 松下	PANASONIC
2SD1755	TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)	ROHM 罗姆	ROHM
2SD1755	Silicon NPN epitaxial planar type(For power amplification with high forward current transfer ratio) Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● High emitter to base voltage VEBO ● I type package enabling direct soldering of the radiating fin to the p	PANASONIC 松下	PANASONIC
2SD1756	isc Silicon NPN Darlington Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 170V(Min) • High DC Current Gain : hFE= 1500(Min) @IC= 5A • Low Collector Saturation Voltage APPLICATIONS • Designed for high voltage high current amplifier applications.	ISC 无锡固电	ISC
2SD1757	丝印代码：AAQ/AAR/AAS；Silicon Epitaxial Planar Transistor FEATURES ● Low VCE(sat).(Typ.8mV at IC/IB=10/1mA). ● Optimal for muting. ● Power dissipation.PD=200mW. APPLICATIONS ● Audio frequency general.	LUGUANG 鲁光电子	LUGUANG
2SD1757	Silicon Epitaxial Planar Transistor FEATURES ● Low VCE(sat).(Typ.8mV at IC/IB=10/1mA). ● Optimal for muting. ● Power dissipation.PD=200mW. APPLICATIONS ● Audio frequency general.	BILIN 银河微电	BILIN
2SD1757K	TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURES ● Optimal for muting.	HTSEMI 金誉半导体	HTSEMI
2SD1757K	SOT-23 Plastic-Encapsulate Transistors FEATURES Optimal for muting.	DGNJDZ 南晶电子	DGNJDZ
2SD1757K	SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● Optimal for muting.	JIANGSU 长电科技	JIANGSU
2SD1757K	Power Transistor Features ● Low VCE(sat). (Typ.8mV at IC/IB = 10/1mA). ● Optimal for muting.	KEXIN 科信电子	KEXIN
2SD1757K	Power Transistor (15V, 0.5A) Features 1) Low VCE(sat). (Typ.8mV at IC/IB = 10/1mA) 2) Optimal for muting.	ROHM 罗姆	ROHM
2SD1757KT146Q	Power Transistor (15V, 0.5A) Features 1) Low VCE(sat). (Typ.8mV at IC/IB = 10/1mA) 2) Optimal for muting.	ROHM 罗姆	ROHM
2SD1758	Medium power transistor (32V, 2A) Features 1) Low VCE(sat). VCE(sat)= 0.5V (Typ.)(IC/IB= 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M Structure Epitaxial planar type NPN silicon transistor	ROHM 罗姆	ROHM
2SD1758	丝印代码：D1758；Medium Power Transistor (32V, 2A) Features 1) Low VCE(sat). VCE(sat)= 0.5V (Typ.)(IC/IB= 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M Structure Epitaxial planar type NPN silicon transistor	ROHM 罗姆	ROHM
2SD1758	Medium Power Transistor Features Low VCE(sat),VCE(sat)=0.5V (IC=2A,IB=0.2A). Epitaxial planar type NPN silicon transistor	KEXIN 科信电子	KEXIN
2SD1758	丝印代码：D1758；Medium Power Transistor (32V, 2A) FTR • FTL Low profile flat-package for limited spece applications. Tape type can be used on automated line. Bulk type is also available.	ROHM 罗姆	ROHM
2SD1758	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 32V(Min) ·DC Current Gain- : hFE= 82(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1758	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 32V(Min) ·DC Current Gain- : hFE= 82(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1758-251	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 32V(Min) ·DC Current Gain- : hFE= 82(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1758-252	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 32V(Min) ·DC Current Gain- : hFE= 82(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1759	Power Transistor Features 1) Darlington connection for high DC current gain. 2) Built-in 4 k resistor between base and emitter. 3) Complements the 2SD1759/2SD1861/2SD947F.	ROHM 罗姆	ROHM
2SD1759	丝印代码：TL；Power transistor (40V, 2A) Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SB1183 / 2SB1239.	ROHM 罗姆	ROHM
2SD1751	Silicon NPN triple diffusion planar type(For power amplification)	PANASONIC 松下	PANASONIC
2SD1752	Power Device - Power Transistors - General-Purpose power amplification	PANASONIC 松下	PANASONIC
2SD1753	Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio)	PANASONIC 松下	PANASONIC
2SD1757KT146R	封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANS NPN 15V 0.5A SMT3 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ROHM 罗姆	ROHM
2SD1757KT146S	封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANS NPN 15V 0.5A SMT3 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ROHM 罗姆	ROHM
2SD1758	isc Silicon NPN Power Transistor 文件：337.56 Kbytes Page：3 Pages	ISC 无锡固电	ISC
2SD1758	Plastic-Encapsulated Transistors 文件：55.6 Kbytes Page：1 Pages	TEL	TEL
2SD1758	丝印代码：D1758；Medium power transistor (32V, 2A) 文件：157.31 Kbytes Page：3 Pages	ROHM 罗姆	ROHM
2SD1758	TO-251-3L Plastic-Encapsulate Transistors 文件：404.23 Kbytes Page：2 Pages	JIANGSU 长电科技	JIANGSU
2SD1758	TRANSISTOR (PNP) 文件：123.08 Kbytes Page：1 Pages	WINNERJOIN 永而佳	WINNERJOIN
2SD1758	Medium power transistor (32V, 2A) 文件：176.4 Kbytes Page：4 Pages	ROHM 罗姆	ROHM
2SD1758_15	NPN Transistors 文件：1.07516 Mbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SD1758-Q	NPN Transistors 文件：1.07516 Mbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SD1758-R	NPN Transistors 文件：1.07516 Mbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SD1758TLQ	Medium power transistor (32V, 2A) 文件：157.31 Kbytes Page：3 Pages	ROHM 罗姆	ROHM
2SD1758TLR	Medium power transistor (32V, 2A) 文件：111.87 Kbytes Page：3 Pages	LITTELFUSE 力特	LITTELFUSE

2SD175产品属性

类型
描述
Polarity：
NPN
I(BR)CEOMin(V)：
15
IC(A)：
0.5
hFEMin：
120
hFEMax：
560
VCE(V)：
3
VCE(sat)(V)：
0.4
IC(mA)：
500
IB(mA)：
50
PTMMax(W)：
0.2
Package Outlines：
SOT-23

2SD175供应商更多...

更新时间：2026-5-14 22:58:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市凌旭科技有限公司	2SD1757K	ROHM	2016+	SMD	3000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市振宏微科技有限公司	2SD1757K	SOT-23	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
深圳市科恒伟业电子有限公司	2SD1755-P	PANASONIC/松下	2450+	SMD	6540	只做原装正品现货或订货!终端客户免费申请样品!	询价
深圳市华斯顿科技有限公司	2SD1754/XN	Toshiba	25+23+	Sot-89	34374	绝对原装正品全新进口深圳现货	询价
深圳市一线半导体有限公司	2SD1753	SANYO	24+		60000		询价
深圳市创新迹电子有限公司	2SD1755-P	PANASONIC	22+	TO263	20000	公司只有原装品质保证	询价
深圳市斌腾达科技有限公司	2SD1757K	ROHM	21+	SOT-346	21000	一级代理进口原装!长期供应!绝对优势价格(诚信经营	询价
上海金庆电子技术有限公司	2SD1755-P	PANASONIC	05+	TO263	416	全新发货1-2天	询价
深圳市东来宝电子科技有限公司	2SD1755-P(Y)TX	PANASONIC/松下	24+	SOT-263	22055	郑重承诺只做原装进口现货	询价
洪芯国际半导体（深圳）有限公司	2SD1757K	长电	26+	SOT-23	86720	全新原装正品价格最实惠假一赔百	询价

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DdatasheetPDF页码索引

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2SD175晶体管资料

2SD175价格

2SD175产品属性

2SD175供应商更多...

2SD175芯片相关品牌

2SD175规格书下载地址

2SD175参数引脚图相关

2SD175数据表相关新闻

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2SD1624G-SOT89R-T-TG_UTC代理商

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DdatasheetPDF页码索引