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位置：首页 > IC中文资料第1565页 > 2SD175

2SD175晶体管资料

  • 2SD175别名：2SD175三极管、2SD175晶体管、2SD175晶体三极管

  • 2SD175生产厂家：日本富士通公司

  • 2SD175制作材料：Si-NPN

  • 2SD175性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L

  • 2SD175封装形式：直插封装

  • 2SD175极限工作电压：100V

  • 2SD175最大电流允许值：5A

  • 2SD175最大工作频率：<1MHZ或未知

  • 2SD175引脚数：2

  • 2SD175最大耗散功率：50W

  • 2SD175放大倍数：

  • 2SD175图片代号：E-44

  • 2SD175vtest：100

  • 2SD175htest：999900

  • 2SD175atest：5

  • 2SD175wtest：50

  • 2SD175代换 2SD175用什么型号代替：BD130,BD245C,BDV95,BDX10,BDX95,BDY20,BDY39,2N3055,2N5758,2N5759,3DD64D,

2SD175价格

参考价格：￥1.2235

型号：2SD1757KT146Q 品牌：Rohm 备注：这里有2SD175多少钱，2025年最近7天走势，今日出价，今日竞价，2SD175批发/采购报价，2SD175行情走势销售排行榜，2SD175报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SD1750

Silicon NPN triple diffusion planar type Darlington

For midium speed power switching Complementary to 2SB1180 and 2SB1180A ■ Features ● High foward current transfer ratio hFE ● High-speed switching ● I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic
2SD1750A

Silicon NPN triple diffusion planar type Darlington

For midium speed power switching Complementary to 2SB1180 and 2SB1180A ■ Features ● High foward current transfer ratio hFE ● High-speed switching ● I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic
2SD1751

Silicon NPN triple diffusion planar type(For power amplification)

Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1170 ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● I type package enabling direct soldering of the radiating f

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic
2SD1752

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type For power amplification and low-voltage switching Complementary to 2SB1148 and 2SB1148A ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic
2SD1752

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHMRohm

罗姆罗姆半导体集团

ROHM
2SD1752A

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type For power amplification and low-voltage switching Complementary to 2SB1148 and 2SB1148A ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic
2SD1753

Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio)

Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio ■ Features ● High foward current transfer ratio hFE ● Satisfactory linearity of foward current transfer ratio hFE ● I type package enabling direct soldering of the radiating fin to the pr

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic
2SD1753

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHMRohm

罗姆罗姆半导体集团

ROHM
2SD1754

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1754

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1754

Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio)

Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio ■ Features ● High foward current transfer ratio hFE ● Satisfactory linearity of foward current transfer ratio hFE ● I type package enabling direct soldering of the radiating fin to the pr

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic
2SD1754-251

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1754-252

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1754A

Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio)

Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio ■ Features ● High foward current transfer ratio hFE ● Satisfactory linearity of foward current transfer ratio hFE ● I type package enabling direct soldering of the radiating fin to the pr

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic
2SD1755

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHMRohm

罗姆罗姆半导体集团

ROHM
2SD1755

Silicon NPN epitaxial planar type(For power amplification with high forward current transfer ratio)

Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● High emitter to base voltage VEBO ● I type package enabling direct soldering of the radiating fin to the p

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic
2SD1756

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 170V(Min) • High DC Current Gain : hFE= 1500(Min) @IC= 5A • Low Collector Saturation Voltage APPLICATIONS • Designed for high voltage high current amplifier applications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1757

Silicon Epitaxial Planar Transistor

FEATURES ● Low VCE(sat).(Typ.8mV at IC/IB=10/1mA). ● Optimal for muting. ● Power dissipation.PD=200mW. APPLICATIONS ● Audio frequency general.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
2SD1757

Silicon Epitaxial Planar Transistor

FEATURES ● Low VCE(sat).(Typ.8mV at IC/IB=10/1mA). ● Optimal for muting. ● Power dissipation.PD=200mW. APPLICATIONS ● Audio frequency general.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
2SD1757K

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● Optimal for muting.

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI
2SD1757K

Power Transistor

Features ● Low VCE(sat). (Typ.8mV at IC/IB = 10/1mA). ● Optimal for muting.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SD1757K

SOT-23 Plastic-Encapsulate Transistors

FEATURES Optimal for muting.

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SD1757K

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Optimal for muting.

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU
2SD1757K

Power Transistor (15V, 0.5A)

Features 1) Low VCE(sat). (Typ.8mV at IC/IB = 10/1mA) 2) Optimal for muting.

ROHMRohm

罗姆罗姆半导体集团

ROHM
2SD1757KT146Q

Power Transistor (15V, 0.5A)

Features 1) Low VCE(sat). (Typ.8mV at IC/IB = 10/1mA) 2) Optimal for muting.

ROHMRohm

罗姆罗姆半导体集团

ROHM
2SD1758

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 32V(Min) ·DC Current Gain- : hFE= 82(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1758

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 32V(Min) ·DC Current Gain- : hFE= 82(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1758

Medium Power Transistor

Features Low VCE(sat),VCE(sat)=0.5V (IC=2A,IB=0.2A). Epitaxial planar type NPN silicon transistor

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SD1758

Medium Power Transistor (32V, 2A)

FTR • FTL Low profile flat-package for limited spece applications. Tape type can be used on automated line. Bulk type is also available.

ROHMRohm

罗姆罗姆半导体集团

ROHM
2SD1758

Medium power transistor (32V, 2A)

Features 1) Low VCE(sat). VCE(sat)= 0.5V (Typ.)(IC/IB= 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M Structure Epitaxial planar type NPN silicon transistor

ROHMRohm

罗姆罗姆半导体集团

ROHM
2SD1758

Medium Power Transistor (32V, 2A)

Features 1) Low VCE(sat). VCE(sat)= 0.5V (Typ.)(IC/IB= 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M Structure Epitaxial planar type NPN silicon transistor

ROHMRohm

罗姆罗姆半导体集团

ROHM
2SD1758-251

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 32V(Min) ·DC Current Gain- : hFE= 82(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1758-252

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 32V(Min) ·DC Current Gain- : hFE= 82(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1759

Power transistor (40V, 2A)

Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SB1183 / 2SB1239.

ROHMRohm

罗姆罗姆半导体集团

ROHM
2SD1757KT146R

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 15V 0.5A SMT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ETC

知名厂家

2SD1757KT146S

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 15V 0.5A SMT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ETC

知名厂家

2SD1758

Medium power transistor (32V, 2A)

文件：176.4 Kbytes Page：4 Pages

ROHMRohm

罗姆罗姆半导体集团

ROHM
2SD1758

TO-251-3L Plastic-Encapsulate Transistors

文件：404.23 Kbytes Page：2 Pages

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU
2SD1758

TRANSISTOR (PNP)

文件：123.08 Kbytes Page：1 Pages

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳深圳市永而佳实业有限公司

WINNERJOIN
2SD1758

Plastic-Encapsulated Transistors

文件：55.6 Kbytes Page：1 Pages

TELTokyo Electron Ltd.

东电电子东京电子有限公司

TEL
2SD1758

Medium power transistor (32V, 2A)

文件：157.31 Kbytes Page：3 Pages

ROHMRohm

罗姆罗姆半导体集团

ROHM
2SD1758

isc Silicon NPN Power Transistor

文件：337.56 Kbytes Page：3 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1758_15

NPN Transistors

文件：1.07516 Mbytes Page：2 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SD1758-Q

NPN Transistors

文件：1.07516 Mbytes Page：2 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SD1758-R

NPN Transistors

文件：1.07516 Mbytes Page：2 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SD1758TLR

Medium power transistor (32V, 2A)

文件：111.87 Kbytes Page：3 Pages

Littelfuselittelfuse

力特力特公司

Littelfuse

2SD175产品属性

  • 类型

    描述

  • 型号

    2SD175

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TRANSISTOR TO-3 100V 5A 50W BEC

2SD175供应商更多...

更新时间：2025-8-5 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市金芯世纪电子有限公司
2SD1754
22+
100000
代理渠道/只做原装/可含税
询价
深圳市得捷芯城科技有限公司
2SD1754A(U)-P(Y)
PANASON
24+
NA/
10245
原装现货,当天可交货,原型号开票
询价
深圳市威雅利发展有限公司
2SD1755-P
PANASONIC
05+
TO263
414
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市科恒伟业电子有限公司
2SD1754A(U)-P(Y)
PANASON
2016+
TO-252
6523
房间原装进口现货假一赔十
询价
深圳市航润创能电子集团有限公司
2SD1755-P
PANASONIC
21+
TO263
414
原装现货假一赔十
询价
深圳市创新迹电子有限公司
2SD1756
日立
22+
TO-220
25000
只做原装进口现货,专注配单
询价
深圳市华斯顿科技有限公司
2SD1754/XN
Toshiba
25+23+
Sot-89
34374
绝对原装正品全新进口深圳现货
询价
深圳市赛美科科技有限公司
2SD1754APL
PANASONIC
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
询价
深圳市一线半导体有限公司
2SD1753
SANYO
24+
60000
询价
深圳市东来宝电子科技有限公司
2SD1755-P(Y)TX
PANASONIC/松下
24+
SOT-263
22055
郑重承诺只做原装进口现货
询价

2SD175芯片相关品牌

  • CHENDA
  • FRANCEJOINT
  • HARWIN
  • IRF
  • Ricoh
  • SCHURTER
  • Semikron
  • Sensata
  • SICK
  • SKYWORKS
  • TDK
  • TOCOS

2SD175规格书下载地址

2SD175参数引脚图相关

2SD175数据表相关新闻

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