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2SD174晶体管资料
2SD174别名:2SD174三极管、2SD174晶体管、2SD174晶体三极管
2SD174生产厂家:日本富士通公司
2SD174制作材料:Si-NPN
2SD174性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
2SD174封装形式:直插封装
2SD174极限工作电压:60V
2SD174最大电流允许值:5A
2SD174最大工作频率:<1MHZ或未知
2SD174引脚数:2
2SD174最大耗散功率:50W
2SD174放大倍数:
2SD174图片代号:E-44
2SD174vtest:60
2SD174htest:999900
- 2SD174atest:5
2SD174wtest:50
2SD174代换 2SD174用什么型号代替:BD130,BD245A,BDV91,BDX10,BDX91,BDY20,BDY39,2N3055,2N5873,2N5874,3DD64C,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon NPN triple diffusion planar type Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Complementary to 2SB1171 and 2SB1171A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) | Panasonic 松下 | |||
Silicon NPN triple diffusion planar type Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Complementary to 2SB1171 and 2SB1171A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) | Panasonic 松下 | |||
Silicon NPN triple diffusion planar type Silicon NPN triple diffusion planar type For low-frequency power amplification Complementary to 2SB1172 and 2SB1172A ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • I type package enabling direct sold | Panasonic 松下 | |||
Silicon NPN triple diffusion planar type Silicon NPN triple diffusion planar type For low-frequency power amplification Complementary to 2SB1172 and 2SB1172A ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • I type package enabling direct sold | Panasonic 松下 | |||
Silicon NPN triple diffusion planar type Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1173 and 2SB1173A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● I type package enabling direct soldering of th | Panasonic 松下 | |||
Silicon NPN triple diffusion planar type Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1173 and 2SB1173A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● I type package enabling direct soldering of th | Panasonic 松下 | |||
Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For power switching Complementary to 2SB1174 ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector current IC ● I type package enabling direct soldering of the radia | Panasonic 松下 | |||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | |||
Silicon NPN epitaxial planar type(For power switching) Silicon NPN epitaxial planar type For power switching Complementary to 2SB1175 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory liniarity of forward current transfer ratio hFE • Large collector current IC • I type package enabling direct soldering of the radiati | Panasonic 松下 | |||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | |||
Silicon NPN epitaxial planar type(For power switching) Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1746 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • I type package enabling direct soldering of the ra | Panasonic 松下 | |||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= 2A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= 2A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= 2A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= 2A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | |||
Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For power switching ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory liniarity of forward current transfer ratio hFE • Large collector current IC • I type package enabling direct soldering of the radiating fin to the printed circ | Panasonic 松下 | |||
Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For power switching ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory liniarity of forward current transfer ratio hFE • Large collector current IC • I type package enabling direct soldering of the radiating fin to the printed circ | Panasonic 松下 | |||
Silicon NPN triple diffusion planar type Darlington Silicon NPN triple diffusion planar type Darlington For low-freauency power amplification Complementary to 2SB1178 and 2SB1178A ■ Features ● High foward current transfer ratio hFE ● High-speed switching ● I type package enabling direct soldering of the radiating fin to the printed circuit bo | Panasonic 松下 | |||
Silicon NPN triple diffusion planar type Darlington Silicon NPN triple diffusion planar type Darlington For low-freauency power amplification Complementary to 2SB1178 and 2SB1178A ■ Features ● High foward current transfer ratio hFE ● High-speed switching ● I type package enabling direct soldering of the radiating fin to the printed circuit bo | Panasonic 松下 | |||
Silicon NPN triple diffusion planar type Darlington(For low-freauency power amplification) Silicon NPN triple diffusion planar type darlington For low-frequency power amplification Complementary to 2SB1179 and 2SB1179A ■ Features • High forward current transfer ratio hFE • High-speed switching • I type package enabling direct soldering of the radiating fin to the printed circuit b | Panasonic 松下 | |||
Silicon NPN triple diffusion planar type Darlington(For low-freauency power amplification) Silicon NPN triple diffusion planar type darlington For low-frequency power amplification Complementary to 2SB1179 and 2SB1179A ■ Features • High forward current transfer ratio hFE • High-speed switching • I type package enabling direct soldering of the radiating fin to the printed circuit b | Panasonic 松下 | |||
TRIPLE DIFFUSED PLANAR TYPE HIGH POWER DARLINGTON 文件:120.43 Kbytes Page:3 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
isc Silicon NPN Darlington Power Transistor 文件:319.9 Kbytes Page:2 Pages | ISC 无锡固电 | |||
isc Silicon NPN Darlington Power Transistor 文件:319.9 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Power Device - Power Transistors - General-Purpose power amplification | Panasonic 松下 | |||
NPN Transistors 文件:790.82 Kbytes Page:2 Pages | KEXIN 科信电子 | |||
NPN Transistors 文件:1.18097 Mbytes Page:2 Pages | KEXIN 科信电子 | |||
NPN Transistors 文件:1.18097 Mbytes Page:2 Pages | KEXIN 科信电子 | |||
NPN Transistors 文件:1.18097 Mbytes Page:2 Pages | KEXIN 科信电子 | |||
NPN Transistors 文件:790.82 Kbytes Page:2 Pages | KEXIN 科信电子 | |||
NPN Transistors 文件:790.82 Kbytes Page:2 Pages | KEXIN 科信电子 | |||
Silicon NPN triple diffusion planar type | Panasonic 松下 | |||
Silicon NPN epitaxial planar type | Panasonic 松下 | |||
NPN Transistors 文件:1.21921 Mbytes Page:3 Pages | KEXIN 科信电子 | |||
NPN Transistors 文件:1.21921 Mbytes Page:3 Pages | KEXIN 科信电子 | |||
NPN Transistors 文件:1.21921 Mbytes Page:3 Pages | KEXIN 科信电子 | |||
NPN Transistors 文件:1.21468 Mbytes Page:3 Pages | KEXIN 科信电子 | |||
NPN Transistors 文件:1.21468 Mbytes Page:3 Pages | KEXIN 科信电子 | |||
NPN Transistors 文件:1.21468 Mbytes Page:3 Pages | KEXIN 科信电子 |
2SD174产品属性
- 类型
描述
- 型号
2SD174
- 功能描述
Bipolar Junction Transistor, NPN Type, TO-92
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PANASONIC |
24+ |
SOT-263 |
5000 |
全现原装公司现货 |
|||
PANASONIC |
26+ |
TO252 |
12000 |
原装,正品 |
|||
PANASONIC |
23+ |
NA |
860 |
专做原装正品,假一罚百! |
|||
PANASONIC/松下 |
23+ |
SOT-252 |
50000 |
全新原装正品现货,支持订货 |
|||
PANASONIC |
24+ |
TO252 |
8000 |
新到现货,只做全新原装正品 |
|||
PANASONIC/松下 |
2450+ |
TO251 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
PANASONIC |
25+ |
TO252 |
8000 |
只有原装 |
|||
PANASONIC/松下 |
23+ |
TO-263 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
PANASONIC |
24+ |
TO252 |
5000 |
全新原装正品,现货销售 |
|||
PANASONIC/松下 |
25+ |
TO-263 |
45000 |
PANASONIC/松下全新现货2SD1742即刻询购立享优惠#长期有排单订 |
2SD174芯片相关品牌
2SD174规格书下载地址
2SD174参数引脚图相关
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2SD174数据表相关新闻
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2023-2-82SD1859TV2R中文资料
2SD1859TV2R中文资料
2019-2-15
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