TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

isc Silicon NPN Power Transistor

DESCRIPTION • High Collector Current:: IC= 5A • Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@IC= 3A • Wide Area of Safe Operation • Complement to Type 2SB1291 APPLICATIONS • Designed for low frequency power amplifier applications.

50V/5A Switching Applications

50V/5A Switching Applications Applications · Relay drivers, high-speed inverters, converters. Features · Low collector-to-emitter saturation voltage. · High fT. · Excellent linearity of hFE. · Fast switching time.

50V/8A Switching Applications

50V/8A Switching Applications Features · Low collector-to-emitter saturation voltage. · High fT. · Excellent linearity of hFE. · Fast switchint time. Applications · Relay drivers, high-speed inverters, converters.

100V/3A Switching Applications

Features 1. Low collector-to-emitter saturation voltage 2. High f T 3. Excellent linearity of h FE 4. Fast switching time

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector–Emitter Sustaining Voltage VCEO: 100 V(Min) ·Low Collector Saturation Voltage : VCE(sat) = 0.4V(Max.)@ IC= 1.5A ·Complement to the PNP 2SB1167 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high v

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 1.5V(Max) @IC=1A APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

100V/4A Switching Applications

Large Current Switching Applications Features · Relay drivers, high-speed inverters, converters. · Low collector-to-emitter saturation voltage. · High fT. · Excellent linearity of hFE. · Short switching time.

isc Silicon NPN Power Transistor

DESCRIPTION • High Voltage • High Switching Speed • Built-in damper diode • Wide Area of Safe Operation APPLICATIONS • Designed for horizontal deflection output applications.

isc Silicon NPN Power Transistor

DESCRIPTION • High Voltage • High Switching Speed • Built-in damper diode • Wide Area of Safe Operation APPLICATIONS • Designed for horizontal deflection output applications.

SILICON PNP TRIPLE DIFFUSED PLANAR TYPE HORIZONTAL DEFLECTION OUTPUT

Silicon PNP Triple-Diffused Planar Type Horizontal Deflection Output ■ Features ● Damper diode built-in ● Minimizes external component counts and simplifies circuitry ● High breakdown voltage, high reliability ● High speed switching ● Wide area of safety operation (ASO)

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Built-in damper diode • High voltage ,high speed • Wide area of safe operation APPLICATIONS • For horizontal deflection output applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Built-in damper diode • High voltage ,high speed • Wide area of safe operation APPLICATIONS • For horizontal deflection output applications

NPN Epitaxial Planar Silicon Transistors 50V/8A Switching Applications

TO-126 Plastic-Encapsulate Transistors

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NPN Epitaxial Planar Silicon Transistors 100V/3A Switching Applications

NPN Epitaxial Planar Silicon Transistors Large Current Switching Applications

TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON

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Silicon NPN Power Transistors

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