GENERAL PURPOSE TRANSISTOR NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR

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Transistors

Medium Power Transistor (32V, 1A)

Medium Power Transistor (32V, 1A) Features 1) Low VCE(sat) = 0.15V(Typ.) (lC / lB = 500mA / 50mA) 2) Compliments 2SB1132 / 2SB1237

MEDIUM POWER NPN TRANSISTOR

MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. FEATURES *Low VCE(SAT): VCE (SAT)= 0.15V(Typ.) (IC/IB= 500mA/50mA) * Complement the 2SB1132.

Medium Power Transistor

Features Low VCE(sat) Compliments to 2SB1132

NPN Silicon General Purpose Transistor

Features Power dissipation PCM : 0.5 W (Tamb= 25oC) Collector current ICM : 1 A Collector-base voltage V(BR)CBO : 40 V Operating & Storage junction Temperature Tj, Tstg : -55 C~ +150 C O O

Medium Power Transistor (32V, 1A)

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