NPN Transistors

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PNP Silicon Medium Power Transistor

FEATURES Power dissipation PCM : 500mW˄ Tamb=25°C Collector current ICM : -1 A Collector-base voltage VB(BR)CBO : -25 V Operating and storage junction temperature range TJ,Tstg: -55ć to +150ć

LF Amp,Electronic Governor Applications

LF Amplifier, Electronic Governor Applications Features · Very small size making it easy to provide high density, small-sized hybrid IC’s.

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 25V (Min) • Complement to Type 2SB1119 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for LF Amp Electronic Governor applications.

NPN Epitaxial Planar Silicon Transistor

Features Very small size making it easy to provide highdensity, small-sized hybrid IC’ s.

Power dissipation, Collector base voltage

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