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2SD153晶体管资料
2SD153别名：2SD153三极管、2SD153晶体管、2SD153晶体三极管
2SD153生产厂家：日本日电公司
2SD153制作材料：Si-NPN
2SD153性质：开关管 （S）_功率放大 （L）
2SD153封装形式：特殊封装
2SD153极限工作电压：250V
2SD153最大电流允许值：10A
2SD153最大工作频率：<1MHZ或未知
2SD153引脚数：3
2SD153最大耗散功率：120W
2SD153放大倍数：
2SD153图片代号：F-28
2SD153vtest：250
2SD153htest：999900
- 2SD153atest：10
2SD153wtest：120
2SD153代换 2SD153用什么型号代替：BLX71,2N5540,2N6325,3DK209E,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
isc Silicon NPN Power Transistor DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) • Good Linearity of hFE • High Speed Switching APPLICATIONS • Designed for power amplifier,power switching applications. | ISC 无锡固电 |   | ||
isc Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) • Good Linearity of hFE • Low Collector Saturation Voltage APPLICATIONS • Designed for AF output amplifier applications. | ISC 无锡固电 | | ||
Silicon NPN triple diffusion planar type Darlington(For high power amplification) Silicon NPN triple diffusion planar type Darlington For high power amplification ■ Features ● Extremely satisfactory linearity of the forward current transfer ratio hFE ● High collector to base voltage VCBO ● Wide area of safe operation (ASO) ● Full-pack package which can be installed to the | PANASONIC 松下 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220Fa package • Wide area of safe operation • High breakdown voltage • DARLINGTON APPLICATIONS • For high power amplification | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220Fa package • Wide area of safe operation • High breakdown voltage • DARLINGTON APPLICATIONS • For high power amplification | ISC 无锡固电 | | ||
Epitaxial Planar NPN Silicon Darlington Transistors [ROHM] Features 1) Darlington connection provises high DC current gain (hFE). 2) Built-in resistance of approx. 4kΩ between its base and emitter. Excellent temprature stability. | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Silicon NPN epitaxial planar type(For low-voltage switching) For low-voltage switching Complementary to 2SB1070 and 2SB1070A ■Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equ | PANASONIC 松下 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
Silicon NPN epitaxial planar type(For low-voltage switching) For low-voltage switching Complementary to 2SB1070 and 2SB1070A ■Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equ | PANASONIC 松下 | | ||
Silicon NPN epitaxial planar type(For low-voltage switching) Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1071 and 2SB1071A ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● Full-pack package which can be installed to the heat sink with one screw | PANASONIC 松下 | | ||
Silicon NPN epitaxial planar type(For low-voltage switching) Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1071 and 2SB1071A ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● Full-pack package which can be installed to the heat sink with one screw | PANASONIC 松下 | | ||
isc Silicon NPN Darlington Power Transistor 文件：273.47 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Wide Area of Safe Operation 文件：135.79 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power Transistor - Silicon PNP Triple-Diffused Planar Darlington Type | PANASONIC 松下 | | ||
Power Device - Power Transistors - General-Purpose power amplification | PANASONIC 松下 | | ||
Silicon NPN Power Transistors 文件：117.68 Kbytes Page：3 Pages | SAVANTIC | | ||
封装/外壳：TO-220-3 整包 包装：散装 描述：TRANS NPN DARL 400V 7A TO220F-A1 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | PANASONIC 松下 | | ||
Epitaxial Planar NPN Silicon Darlington Transistors | ROHM 罗姆 | |
2SD153产品属性
- 类型
描述
- 型号
2SD153
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY MATS.TRANS. TO-126B 50V 2A 1.2W ECB
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI |
24+ |
60000 |
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2018-12-19
DdatasheetPDF页码索引
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