NPN Transistors

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Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 3A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 3A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN epitaxial planar type(For power switching)

For power switching Complementary to 2SB934 ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector current IC ● N type package enabling direct soldering of the radiating fin to the printe

Silicon NPN Epitaxial Planar Type

Features • Low collector-emitter saturation voltage VCE(sat). • Satisfactory linearity of forward current transfer ratio hFE. • Large collector current IC.

Silicon NPN Epitaxial Planar Type

Features • Low collector-emitter saturation voltage VCE(sat). • Satisfactory linearity of forward current transfer ratio hFE. • Large collector current IC.