NPN Transistors

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Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN triple diffusion planar type(For power amplification)

Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB930 and 2SB930A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● N type package enabling direct soldering of the

Silicon PNP epitaxial planar type(For power amplification)

Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A ■Features •High forward current transfer ratio hFEwhich has satisfactory linearity •Low collector-emitter saturation voltage VCE(sat) •N type package enabling direct soldering of the ra

Silicon NPN Triple Diffusion Planar Type

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