For Low-Frequency Amplification

Silicon NPN epitaxial planar type darlington For low-frequency amplification ■ Features • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer. • A shunt resistor is omitted from the driver.

Power Device - Power Transistors - Others

For Low-Frequency Amplification

Silicon NPN epitaxial planar type darlington For low-frequency amplification ■ Features • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer. • A shunt resistor is omitted from the driver.

For Low-Frequency Amplification

Silicon NPN epitaxial planar type darlington For low-frequency amplification ■ Features • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer. • A shunt resistor is omitted from the driver.

For Low-Frequency Amplification

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN DARL 50V 1A TO126B-A1 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN DARL 80V 1A TO126B-A1 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个