NPN Silicon Plastic-Encapsulate Transistor

Features • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A • Collector-base Voltage 60V • Operating and storage junction temperature range: -55°C to +150°C • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffi

NPN Silicon Plastic-Encapsulate Transistor

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General Purpose Transistor

中等功率双极型晶体管

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in driver stage of AF amplifier applications

2SC945

■ Features ● Collector current up to 150mA ● High hFE linearity ● Complementary to 2SA733

NPN Silicon Planar Epitaxial Transistor

NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2SC945 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR DESIGNED FOR AUDIO FREQUENCY AMPLIFIER. IT IS COMPLEMENTARY TO THE PNP TYPE 2SA733.

NPN Silicon Transistor(AF amplifier and low speed switching)

DESCRIPTION The 2SC945 is designed for use in driver stage of AF amplifier and low speed switching.

AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR

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NPN Silicon Plastic-Encapsulate Transistor

文件：296.01 Kbytes Page：2 Pages

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：带盒（TB） 描述：TRANS NPN 50V 0.15A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个