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型号 功能描述 生产厂家 企业 LOGO 操作
2SC945-GR

NPN Silicon Plastic-Encapsulate Transistor

Features • Capable of 0.4Watts of Power Dissipation. • Collector-current 0.15A • Collector-base Voltage 60V • Operating and storage junction temperature range: -55°C to +150°C • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffi

MCC

2SC945-GR

NPN Silicon Plastic-Encapsulate Transistor

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MCC

2SC945-GR

General Purpose Transistor

YEASHIN

亚昕科技

2SC945-GR

中等功率双极型晶体管

MCC

封装/外壳:TO-226-3,TO-92-3(TO-226AA)成形引线 包装:带盒(TB) 描述:TRANS NPN 50V 0.15A TO92 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

NPN Silicon Transistor(AF amplifier and low speed switching)

DESCRIPTION The 2SC945 is designed for use in driver stage of AF amplifier and low speed switching.

NEC

瑞萨

NPN Silicon Transistor(AF amplifier and low speed switching)

DESCRIPTION The 2SC945 is designed for use in driver stage of AF amplifier and low speed switching.

NEC

瑞萨

NPN Silicon Transistor(AF amplifier and low speed switching)

DESCRIPTION The 2SC945 is designed for use in driver stage of AF amplifier and low speed switching.

NEC

瑞萨

NPN Silicon Transistor(AF amplifier and low speed switching)

DESCRIPTION The 2SC945 is designed for use in driver stage of AF amplifier and low speed switching.

NEC

瑞萨

NPN Silicon Transistor(AF amplifier and low speed switching)

DESCRIPTION The 2SC945 is designed for use in driver stage of AF amplifier and low speed switching.

NEC

瑞萨

2SC945-GR产品属性

  • 类型

    描述

  • Product Polarity:

     NPN

  • SMD/ThroHole:

     Through Hole

  • VCEO (V):

     50

  • VCBO (V):

     60

  • VEBO (V):

     5.0

  • IC (A):

     0.15

  • PC (W):

     0.4

  • HFE:

     200-400

  • @IC (mA):

     1.0

  • @VCE (V):

     6.0

  • ICBO:

     0.1 µA

  • IEBO:

     0.1 µA

  • VCE(sat) (V):

     0.3

  • VBE(sat) (V):

     1.0

  • FT (MHz):

     150

  • Package Qty:

     Bulk

  • FIT:

     48; Tj=100℃

更新时间:2026-7-30 22:26:00
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