Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Transistor Silicon NPN Epitaxial Type

○ Audio Frequency Amplifier Applications • High collector voltage : VCEO = 160 V • Small collector output capacitance : Cob = 12pF (typ.) • High transition frequency : fT = 100MHz (typ.) • Complementary to 2SA2220

230V / 15A, AF100W Output Applications

230V / 15A, AF100W Output Applications Features • Large current capacitance. • Wide ASO and high durability against breakdown. • Adoption of MBIT process. Applications • 230V / 15A, AF100W output applications.

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications

High-Current Switching Applications Features • Adoption of MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • Relay drivers, lamp drivers, motor drivers.

isc Silicon NPN Power Transistors

DESCRIPTION • Collector-Emitter Saturation Voltage- : VCE(sat) = 0.36V(Max.)@IC= 6A • Collector-Emitter Breakdown Voltage- : V(BR) CEO= 50V(Min) • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Relay drivers,lamp drivers,motor dri

Bipolar Transistor 50V, 10A, Low VCE(sat) NPN TO-220F-3FS

Bipolar Transistor 50V, 10A, Low VCE(sat) NPN TO-220F-3FS Features • Adoption of MBIT process • Large current capacitance (IC=10A) • Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) • High-speed switching (tf=25ns(typ.)) Applications • Relay drivers, lamp drivers, motor

High-Current Switching Applications

NPN Epitaxial Planar Silicon Transistor Features • Adoption of MBIT process • Large current capacitance (IC=10A) • Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) • High-speed switching (tf=25ns(typ.)) Applications • Relay drivers, lamp drivers, motor drivers

NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications

NPN Triple Diffused Planar Silicon Transistor Features • High breakdown voltage. • Ultrahigh-speed switching. • Wide ASO. • Adoption of MBIT process.

音频功放晶体管

Power transistor for high-speed switching applications

High Voltage Switching Applications

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封装/外壳：TO-220-3 整包 包装：散装 描述：TRANS NPN 50V 10A TO220ML 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

TRANS NPN 50V 10A TO-220ML

isc Silicon NPN Power Transistors

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封装/外壳：TO-220-3 整包 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 10A TO220F-3FS 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

isc Silicon NPN Power Transistor

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Audio Amplification Transistor

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Audio Amplification Transistor

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isc Silicon NPN Power Transistor

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