Transistor Silicon NPN Epitaxial Type

○ Audio Frequency Amplifier Applications • High collector voltage : VCEO = 160 V • Small collector output capacitance : Cob = 12pF (typ.) • High transition frequency : fT = 100MHz (typ.) • Complementary to 2SA2220

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

230V / 15A, AF100W Output Applications

230V / 15A, AF100W Output Applications Features • Large current capacitance. • Wide ASO and high durability against breakdown. • Adoption of MBIT process. Applications • 230V / 15A, AF100W output applications.

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power transistor for high-speed switching applications

Application Scope：AC adaptors / High-speed high-voltage switching\nPolarity：NPN\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 1.5 A \nCollector Current ICP 3 A \nCollector power dissipation PC 1.1 W \nCollector-Base Voltage VCBO 800 V \nCollector-emitter voltage VCEO 375 V ;

NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications

High-Current Switching Applications Features • Adoption of MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • Relay drivers, lamp drivers, motor drivers.

isc Silicon NPN Power Transistors

DESCRIPTION • Collector-Emitter Saturation Voltage- : VCE(sat) = 0.36V(Max.)@IC= 6A • Collector-Emitter Breakdown Voltage- : V(BR) CEO= 50V(Min) • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Relay drivers,lamp drivers,motor dri

Bipolar Transistor 50V, 10A, Low VCE(sat) NPN TO-220F-3FS

Bipolar Transistor 50V, 10A, Low VCE(sat) NPN TO-220F-3FS Features • Adoption of MBIT process • Large current capacitance (IC=10A) • Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) • High-speed switching (tf=25ns(typ.)) Applications • Relay drivers, lamp drivers, motor

丝印代码：C6144；High-Current Switching Applications

NPN Epitaxial Planar Silicon Transistor Features • Adoption of MBIT process • Large current capacitance (IC=10A) • Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) • High-speed switching (tf=25ns(typ.)) Applications • Relay drivers, lamp drivers, motor drivers

NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications

NPN Triple Diffused Planar Silicon Transistor Features • High breakdown voltage. • Ultrahigh-speed switching. • Wide ASO. • Adoption of MBIT process.

音频功放晶体管

High Voltage Switching Applications

文件：212.79 Kbytes Page：5 Pages

封装/外壳：TO-220-3 整包 包装：散装 描述：TRANS NPN 50V 10A TO220ML 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

TRANS NPN 50V 10A TO-220ML

isc Silicon NPN Power Transistors

文件：268.59 Kbytes Page：2 Pages

封装/外壳：TO-220-3 整包 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 10A TO220F-3FS 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Audio Amplification Transistor

文件：225.06 Kbytes Page：6 Pages

isc Silicon NPN Power Transistor

文件：283.93 Kbytes Page：2 Pages

Audio Amplification Transistor

文件：224.77 Kbytes Page：6 Pages

isc Silicon NPN Power Transistor

文件：288.79 Kbytes Page：2 Pages