2SC61晶体管资料

  • 2SC61别名:2SC61三极管、2SC61晶体管、2SC61晶体三极管

  • 2SC61生产厂家:日本富士通公司

  • 2SC61制作材料:Si-NPN

  • 2SC61性质:射频/高频放大 (HF)_开关管 (S)

  • 2SC61封装形式:直插封装

  • 2SC61极限工作电压:30V

  • 2SC61最大电流允许值:0.3A

  • 2SC61最大工作频率:180MHZ

  • 2SC61引脚数:3

  • 2SC61最大耗散功率:1.2W

  • 2SC61放大倍数

  • 2SC61图片代号:D-112

  • 2SC61vtest:30

  • 2SC61htest:180000000

  • 2SC61atest:0.3

  • 2SC61wtest:1.2

  • 2SC61代换 2SC61用什么型号代替:BD135,BD226,BFX96,BFX97,BSW51,BSW52,BSW53,BSW54,2N2217,2N2218,2N2219,2SC3419,3DA103,

2SC61价格

参考价格:¥1.6372

型号:2SC6144SG 品牌:ONSemi 备注:这里有2SC61多少钱,2025年最近7天走势,今日出价,今日竞价,2SC61批发/采购报价,2SC61行情走势销售排行榜,2SC61报价。
型号 功能描述 生产厂家 企业 LOGO 操作

NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications

NPN Triple Diffused Planar Silicon Transistor Features • High breakdown voltage and high reliability. • Ultrahigh-speed switching. • Wide ASO. • Adoption of MBIT process.

SANYO

三洋

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 0.3A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 0.3A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 0.3A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 0.3A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications

NPN Triple Diffused Planar Silicon Transistor Features • High breakdown voltage and high reliability. • Ultrahigh-speed switching. • Wide ASO. • Adoption of MBIT process.

SANYO

三洋

NPN Triple Diffused Planar Silicon Transistor For 14, 21 inch TV Power Supply

NPN Triple Diffused Planar Silicon Transistor Features • High breakdown voltage and high reliability. • Ultrahigh-speed switching. • Wide ASO. • Adoption of MBIT process. • Attachment workability is good by Mica-less package. Applications • Recommended for use in 14, 21 inch TV power suppl

SANYO

三洋

NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications

NPN Triple Diffused Planar Silicon Transistor Features • High speed. • High breakdown voltage (VCBO=1500V). • High reliability (Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode.

SANYO

三洋

NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications

NPN Triple Diffused Planar Silicon Transistor Features • High speed. • High breakdown voltage (VCBO=1500V). • High reliability (Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode.

SANYO

三洋

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Transistor Silicon NPN Epitaxial Type

○ Audio Frequency Amplifier Applications • High collector voltage : VCEO = 160 V (min) • Small collector output capacitance : Cob = 12pF (typ.) • High transition frequency : fT = 100MHz (typ.) • Complementary to 2SA2219

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Transistor Silicon NPN Epitaxial Type

○ Audio Frequency Amplifier Applications • High collector voltage : VCEO = 160 V • Small collector output capacitance : Cob = 12pF (typ.) • High transition frequency : fT = 100MHz (typ.) • Complementary to 2SA2220

TOSHIBA

东芝

230V / 15A, AF100W Output Applications

230V / 15A, AF100W Output Applications Features • Large current capacitance. • Wide ASO and high durability against breakdown. • Adoption of MBIT process. Applications • 230V / 15A, AF100W output applications.

SANYO

三洋

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications

High-Current Switching Applications Features • Adoption of MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • Relay drivers, lamp drivers, motor drivers.

SANYO

三洋

isc Silicon NPN Power Transistors

DESCRIPTION • Collector-Emitter Saturation Voltage- : VCE(sat) = 0.36V(Max.)@IC= 6A • Collector-Emitter Breakdown Voltage- : V(BR) CEO= 50V(Min) • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Relay drivers,lamp drivers,motor dri

ISC

无锡固电

Bipolar Transistor 50V, 10A, Low VCE(sat) NPN TO-220F-3FS

Bipolar Transistor 50V, 10A, Low VCE(sat) NPN TO-220F-3FS Features • Adoption of MBIT process • Large current capacitance (IC=10A) • Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) • High-speed switching (tf=25ns(typ.)) Applications • Relay drivers, lamp drivers, motor

ONSEMI

安森美半导体

High-Current Switching Applications

NPN Epitaxial Planar Silicon Transistor Features • Adoption of MBIT process • Large current capacitance (IC=10A) • Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) • High-speed switching (tf=25ns(typ.)) Applications • Relay drivers, lamp drivers, motor drivers

SANYO

三洋

NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications

NPN Triple Diffused Planar Silicon Transistor Features • High breakdown voltage. • Ultrahigh-speed switching. • Wide ASO. • Adoption of MBIT process.

SANYO

三洋

High-Speed Switching Applications DC-DC Converter Applications Strobe Applications

文件:172.22 Kbytes Page:5 Pages

TOSHIBA

东芝

PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

文件:49.53 Kbytes Page:5 Pages

SANYO

三洋

DC / DC Converter Applications

文件:107.11 Kbytes Page:5 Pages

ONSEMI

安森美半导体

PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

文件:49.45 Kbytes Page:5 Pages

SANYO

三洋

NPN Bipolar Transistor for DC-DC Converters

ONSEMI

安森美半导体

Transistor for low frequency small-signal amplification

TOSHIBA

东芝

NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications

ONSEMI

安森美半导体

Small signal low frequency amplifier

文件:82.41 Kbytes Page:4 Pages

ROHM

罗姆

封装/外壳:SC-72 成形引线 包装:剪切带(CT)带盒(TB) 描述:TRANS NPN 50V 0.1A VMN3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ROHM

罗姆

封装/外壳:SC-72 成形引线 包装:剪切带(CT)带盒(TB) 描述:TRANS NPN 50V 0.1A VMN3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ROHM

罗姆

Color TV Horizontal Deflection Output Applications

文件:51.79 Kbytes Page:4 Pages

SANYO

三洋

FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

文件:111.54 Kbytes Page:4 Pages

ISAHAYA

谏早电子

FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

文件:111.54 Kbytes Page:4 Pages

ISAHAYA

谏早电子

Power Amplifier Applications Power Switching Applications

文件:207.55 Kbytes Page:5 Pages

TOSHIBA

东芝

High-Speed Switching Applications Power Amplifier Applications

文件:156.98 Kbytes Page:5 Pages

TOSHIBA

东芝

High-Speed Switching Applications DC-DC Converter Applications LCD Backlighting Applications

文件:226.01 Kbytes Page:5 Pages

TOSHIBA

东芝

High-Speed Switching Applications DC-DC Converter Applications

文件:146.4 Kbytes Page:4 Pages

TOSHIBA

东芝

High-Speed Switching Applications DC-DC Converter Applications Strobe Applications

文件:150.85 Kbytes Page:4 Pages

TOSHIBA

东芝

High-Speed Switching Applications DC-DC Converter Applications Strobe Applications

文件:147.15 Kbytes Page:4 Pages

TOSHIBA

东芝

High Voltage Switching Applications

文件:212.79 Kbytes Page:5 Pages

TOSHIBA

东芝

isc Silicon NPN Power Transistors

文件:268.59 Kbytes Page:2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

文件:283.93 Kbytes Page:2 Pages

ISC

无锡固电

Audio Amplification Transistor

文件:225.06 Kbytes Page:6 Pages

Sanken

三垦

Audio Amplification Transistor

文件:224.77 Kbytes Page:6 Pages

Sanken

三垦

isc Silicon NPN Power Transistor

文件:288.79 Kbytes Page:2 Pages

ISC

无锡固电

2SC61产品属性

  • 类型

    描述

  • 型号

    2SC61

  • 制造商

    TOSHIBA

  • 制造商全称

    Toshiba Semiconductor

  • 功能描述

    High-Speed Switching Applications DC-DC Converter Applications Strobe Applications

更新时间:2025-12-25 16:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
24+
N/A
8000
全新原装正品,现货销售
ON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ONSEMI/安森美
2450+
TO-220
6540
只做原装正品假一赔十为客户做到零风险!!
三年内
1983
只做原装正品
ON
23+
TO-220-3
11846
一级代理商现货批发,原装正品,假一罚十
ON(安森美)
25+
TO-220F-3FS
500000
源自原厂成本,高价回收工厂呆滞
ON(安森美)
2447
TO-220F-3FS
105000
50个/管一级代理专营品牌!原装正品,优势现货,长期
ON/安森美
22+
TO-220F
6000
十年配单,只做原装
ON
24+
TO-220-3 FullPak
25000
ON全系列可订货

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